Part Details for JANS2N7270 by International Rectifier
Overview of JANS2N7270 by International Rectifier
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for JANS2N7270
JANS2N7270 CAD Models
JANS2N7270 Part Data Attributes
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JANS2N7270
International Rectifier
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Datasheet
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JANS2N7270
International Rectifier
Power Field-Effect Transistor, 11A I(D), 500V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Part Package Code | TO-254AA | |
Package Description | FLANGE MOUNT, S-XSFM-P3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | RADIATION HARDENED | |
Avalanche Energy Rating (Eas) | 500 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 11 A | |
Drain-source On Resistance-Max | 0.45 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-254AA | |
JESD-30 Code | S-XSFM-P3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | UNSPECIFIED | |
Package Shape | SQUARE | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 44 A | |
Qualification Status | Not Qualified | |
Reference Standard | MIL-19500/603E | |
Surface Mount | NO | |
Terminal Form | PIN/PEG | |
Terminal Position | SINGLE | |
Transistor Element Material | SILICON |
Alternate Parts for JANS2N7270
This table gives cross-reference parts and alternative options found for JANS2N7270. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANS2N7270, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRHM7450SE | Power Field-Effect Transistor, 12A I(D), 500V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN | Infineon Technologies AG | JANS2N7270 vs IRHM7450SE |
JANKCAH2N7270 | Power Field-Effect Transistor, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 | Infineon Technologies AG | JANS2N7270 vs JANKCAH2N7270 |
IRHM7450SEPBF | Power Field-Effect Transistor, 12A I(D), 500V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN | International Rectifier | JANS2N7270 vs IRHM7450SEPBF |
IRHM7450PBF | Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3 | International Rectifier | JANS2N7270 vs IRHM7450PBF |
JANSH2N7270 | Power Field-Effect Transistor, 11A I(D), 500V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | International Rectifier | JANS2N7270 vs JANSH2N7270 |
JANTXV2N7270 | Power Field-Effect Transistor, 11A I(D), 500V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN | Semicoa Semiconductors | JANS2N7270 vs JANTXV2N7270 |
JANSF2N7270 | Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3 | International Rectifier | JANS2N7270 vs JANSF2N7270 |
IRHM8450 | Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3 | International Rectifier | JANS2N7270 vs IRHM8450 |
JANTXVH2N7270 | Power Field-Effect Transistor, 11A I(D), 500V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN | Infineon Technologies AG | JANS2N7270 vs JANTXVH2N7270 |
JANSG2N7270 | Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3 | International Rectifier | JANS2N7270 vs JANSG2N7270 |