Datasheets
JANS2N7270 by: International Rectifier

Power Field-Effect Transistor, 11A I(D), 500V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN

Part Details for JANS2N7270 by International Rectifier

Overview of JANS2N7270 by International Rectifier

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Applications Consumer Electronics Audio and Video Systems

Part Details for JANS2N7270

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JANS2N7270 Part Data Attributes

JANS2N7270 International Rectifier
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JANS2N7270 International Rectifier Power Field-Effect Transistor, 11A I(D), 500V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN
Part Life Cycle Code Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-254AA
Package Description FLANGE MOUNT, S-XSFM-P3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature RADIATION HARDENED
Avalanche Energy Rating (Eas) 500 mJ
Case Connection ISOLATED
Configuration SINGLE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 0.45 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-254AA
JESD-30 Code S-XSFM-P3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material UNSPECIFIED
Package Shape SQUARE
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 44 A
Qualification Status Not Qualified
Reference Standard MIL-19500/603E
Surface Mount NO
Terminal Form PIN/PEG
Terminal Position SINGLE
Transistor Element Material SILICON

Alternate Parts for JANS2N7270

This table gives cross-reference parts and alternative options found for JANS2N7270. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANS2N7270, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRHM7450SE Power Field-Effect Transistor, 12A I(D), 500V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN Infineon Technologies AG JANS2N7270 vs IRHM7450SE
JANKCAH2N7270 Power Field-Effect Transistor, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 Infineon Technologies AG JANS2N7270 vs JANKCAH2N7270
IRHM7450SEPBF Power Field-Effect Transistor, 12A I(D), 500V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN International Rectifier JANS2N7270 vs IRHM7450SEPBF
IRHM7450PBF Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3 International Rectifier JANS2N7270 vs IRHM7450PBF
JANSH2N7270 Power Field-Effect Transistor, 11A I(D), 500V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA International Rectifier JANS2N7270 vs JANSH2N7270
JANTXV2N7270 Power Field-Effect Transistor, 11A I(D), 500V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN Semicoa Semiconductors JANS2N7270 vs JANTXV2N7270
JANSF2N7270 Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3 International Rectifier JANS2N7270 vs JANSF2N7270
IRHM8450 Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3 International Rectifier JANS2N7270 vs IRHM8450
JANTXVH2N7270 Power Field-Effect Transistor, 11A I(D), 500V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN Infineon Technologies AG JANS2N7270 vs JANTXVH2N7270
JANSG2N7270 Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3 International Rectifier JANS2N7270 vs JANSG2N7270
Part Number Description Manufacturer Compare
IRHM8450 Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3 Infineon Technologies AG JANS2N7270 vs IRHM8450
JANTXV2N7270 Power Field-Effect Transistor, 11A I(D), 500V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN Semicoa Semiconductors JANS2N7270 vs JANTXV2N7270
IRHM7450SE Power Field-Effect Transistor, 12A I(D), 500V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN Infineon Technologies AG JANS2N7270 vs IRHM7450SE
JANSH2N7270 Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3 Infineon Technologies AG JANS2N7270 vs JANSH2N7270
IRHM7450PBF Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3 International Rectifier JANS2N7270 vs IRHM7450PBF
JANSF2N7270 Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3 International Rectifier JANS2N7270 vs JANSF2N7270
JANTXV2N7270 Power Field-Effect Transistor, 11A I(D), 500V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN International Rectifier JANS2N7270 vs JANTXV2N7270
JANSG2N7270 Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3 Infineon Technologies AG JANS2N7270 vs JANSG2N7270
JANSG2N7270 Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3 International Rectifier JANS2N7270 vs JANSG2N7270
IRHM7450SEPBF Power Field-Effect Transistor, 12A I(D), 500V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN International Rectifier JANS2N7270 vs IRHM7450SEPBF

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