There are no models available for this part yet.
Overview of JANSG2N7270 by Infineon Technologies AG
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 10 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Audio and Video Systems
Price & Stock for JANSG2N7270 by Infineon Technologies AG
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
DISTI #
JANSG2N7270
|
Avnet Americas | Transistor MOSFET N-Channel 500V 11A 3-Pin TO-254AA - Bulk (Alt: JANSG2N7270) Min Qty: 25 Package Multiple: 1 Container: Bulk | 0 |
|
RFQ |
CAD Models for JANSG2N7270 by Infineon Technologies AG
Part Data Attributes for JANSG2N7270 by Infineon Technologies AG
|
|
---|---|
Rohs Code
|
No
|
Part Life Cycle Code
|
Active
|
Ihs Manufacturer
|
INFINEON TECHNOLOGIES AG
|
Package Description
|
FLANGE MOUNT, S-CSFM-P3
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
3A001.A.1.A
|
Additional Feature
|
RADIATION HARDENED
|
Avalanche Energy Rating (Eas)
|
500 mJ
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
500 V
|
Drain Current-Max (ID)
|
11 A
|
Drain-source On Resistance-Max
|
0.5 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code
|
TO-254AA
|
JESD-30 Code
|
S-CSFM-P3
|
JESD-609 Code
|
e0
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
Package Body Material
|
CERAMIC, METAL-SEALED COFIRED
|
Package Shape
|
SQUARE
|
Package Style
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
Polarity/Channel Type
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM)
|
44 A
|
Qualification Status
|
Qualified
|
Reference Standard
|
MIL-19500/603
|
Surface Mount
|
NO
|
Terminal Finish
|
Tin/Lead (Sn/Pb)
|
Terminal Form
|
PIN/PEG
|
Terminal Position
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Alternate Parts for JANSG2N7270
This table gives cross-reference parts and alternative options found for JANSG2N7270. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANSG2N7270, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
JANS2N7270 | Power Field-Effect Transistor, 11A I(D), 500V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN | International Rectifier | JANSG2N7270 vs JANS2N7270 |
IRHM7450SE | Power Field-Effect Transistor, 12A I(D), 500V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN | Infineon Technologies AG | JANSG2N7270 vs IRHM7450SE |
JANKCAH2N7270 | Power Field-Effect Transistor, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 | Infineon Technologies AG | JANSG2N7270 vs JANKCAH2N7270 |
IRHM7450SEPBF | Power Field-Effect Transistor, 12A I(D), 500V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN | International Rectifier | JANSG2N7270 vs IRHM7450SEPBF |
IRHM7450PBF | Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3 | International Rectifier | JANSG2N7270 vs IRHM7450PBF |
JANSH2N7270 | Power Field-Effect Transistor, 11A I(D), 500V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | International Rectifier | JANSG2N7270 vs JANSH2N7270 |
JANTXV2N7270 | Power Field-Effect Transistor, 11A I(D), 500V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN | Semicoa Semiconductors | JANSG2N7270 vs JANTXV2N7270 |
JANSF2N7270 | Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3 | International Rectifier | JANSG2N7270 vs JANSF2N7270 |
IRHM8450 | Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3 | International Rectifier | JANSG2N7270 vs IRHM8450 |
JANTXVH2N7270 | Power Field-Effect Transistor, 11A I(D), 500V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN | Infineon Technologies AG | JANSG2N7270 vs JANTXVH2N7270 |
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