Part Details for JANSH2N7431U by Infineon Technologies AG
Overview of JANSH2N7431U by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (6 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for JANSH2N7431U
JANSH2N7431U CAD Models
JANSH2N7431U Part Data Attributes
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JANSH2N7431U
Infineon Technologies AG
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Datasheet
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JANSH2N7431U
Infineon Technologies AG
Power Field-Effect Transistor, 75A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD2, 3 PIN
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | CHIP CARRIER, R-CBCC-N3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | 3A001.A.1.A | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 500 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 75 A | |
Drain-source On Resistance-Max | 0.018 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-CBCC-N3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | CHIP CARRIER | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 3 W | |
Pulsed Drain Current-Max (IDM) | 300 A | |
Qualification Status | Qualified | |
Reference Standard | MIL-19500/664 | |
Surface Mount | YES | |
Terminal Finish | TIN LEAD | |
Terminal Form | NO LEAD | |
Terminal Position | BOTTOM | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for JANSH2N7431U
This table gives cross-reference parts and alternative options found for JANSH2N7431U. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANSH2N7431U, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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JANSR2N7431U | Power Field-Effect Transistor, 75A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD2, 3 PIN | International Rectifier | JANSH2N7431U vs JANSR2N7431U |
JANTXVH2N7431U | Power Field-Effect Transistor, 75A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD, 3 PIN | International Rectifier | JANSH2N7431U vs JANTXVH2N7431U |
JANSR2N7431U | Power Field-Effect Transistor, 75A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD2, 3 PIN | Infineon Technologies AG | JANSH2N7431U vs JANSR2N7431U |
IRHNA7064PBF | Power Field-Effect Transistor, 75A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-3, 3 PIN | International Rectifier | JANSH2N7431U vs IRHNA7064PBF |
IRHNA7064 | Power Field-Effect Transistor, 75A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-3, 3 PIN | International Rectifier | JANSH2N7431U vs IRHNA7064 |
JANSH2N7431U | Power Field-Effect Transistor, 75A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD2, 3 PIN | International Rectifier | JANSH2N7431U vs JANSH2N7431U |