Part Details for JANTX2N6760 by Infineon Technologies AG
Overview of JANTX2N6760 by Infineon Technologies AG
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for JANTX2N6760
Part # | Distributor | Description | Stock | Price | Buy | |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 100 Package Multiple: 1 | 0 |
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$25.2000 | Buy Now |
Part Details for JANTX2N6760
JANTX2N6760 CAD Models
JANTX2N6760 Part Data Attributes
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JANTX2N6760
Infineon Technologies AG
Buy Now
Datasheet
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JANTX2N6760
Infineon Technologies AG
Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
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Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | TO-3, 2 PIN | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 1.7 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 400 V | |
Drain Current-Max (ID) | 5.5 A | |
Drain-source On Resistance-Max | 1.22 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-204AA | |
JESD-30 Code | O-MBFM-P2 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 75 W | |
Pulsed Drain Current-Max (IDM) | 22 A | |
Qualification Status | Qualified | |
Reference Standard | MIL-19500/542 | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | PIN/PEG | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for JANTX2N6760
This table gives cross-reference parts and alternative options found for JANTX2N6760. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTX2N6760, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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2N6760R1 | Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN | TT Electronics Resistors | JANTX2N6760 vs 2N6760R1 |
IRF331 | Power Field-Effect Transistor, 5.5A I(D), 350V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204 | Vishay Siliconix | JANTX2N6760 vs IRF331 |
2N6760 | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Harris Semiconductor | JANTX2N6760 vs 2N6760 |
JANTXV2N6760 | Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | Infineon Technologies AG | JANTX2N6760 vs JANTXV2N6760 |
IRF331 | Power Field-Effect Transistor, 5.5A I(D), 350V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | International Rectifier | JANTX2N6760 vs IRF331 |
2N6760 | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Motorola Semiconductor Products | JANTX2N6760 vs 2N6760 |
IRF332 | Power Field-Effect Transistor, 4.5A I(D), 400V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | International Rectifier | JANTX2N6760 vs IRF332 |
2N6760 | Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN | TT Electronics Resistors | JANTX2N6760 vs 2N6760 |
IRF331 | TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,5.5A I(D),TO-3 | Intersil Corporation | JANTX2N6760 vs IRF331 |
IRF332 | Power Field-Effect Transistor, 4.5A I(D), 400V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Harris Semiconductor | JANTX2N6760 vs IRF332 |