JANTX2N6802
Description: Power Field-Effect Transistor, 2.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,

Overview of JANTX2N6802 by Unitrode Corporation

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Part Data Attributes for JANTX2N6802 by Unitrode Corporation

JANTX2N6802
Unitrode Corporation
-
-
Part Life Cycle Code
Obsolete
Ihs Manufacturer
UNITRODE CORP
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.29.00.95
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
500 V
Drain Current-Max (ID)
2.5 A
Drain-source On Resistance-Max
1.5 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
60 pF
JEDEC-95 Code
TO-205AF
JESD-30 Code
O-MBCY-W3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
METAL
Package Shape
ROUND
Package Style
CYLINDRICAL
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
25 W
Pulsed Drain Current-Max (IDM)
11 A
Qualification Status
Not Qualified
Reference Standard
MILITARY STANDARD (USA)
Surface Mount
NO
Terminal Form
WIRE
Terminal Position
BOTTOM
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
85 ns
Turn-on Time-Max (ton)
60 ns
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  1. JANTX2N6802
    Unitrode Corporation
    Power Field-Effect Transistor, 2.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
    VS

Alternate Parts for JANTX2N6802

This table gives cross-reference parts and alternative options found for JANTX2N6802. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTX2N6802, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
JANTX2N6802 Power Field-Effect Transistor, 3.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF Harris Semiconductor JANTX2N6802 vs JANTX2N6802
IRFF430 Power Field-Effect Transistor, 2.75A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Fairchild Semiconductor Corporation JANTX2N6802 vs IRFF430
2N6802 Power Field-Effect Transistor, 2.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Unitrode Corporation JANTX2N6802 vs 2N6802
2N6802 2.5A, 500V, 1.725ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited JANTX2N6802 vs 2N6802
JANTX2N6802 Power Field-Effect Transistor, 2.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Unitrode Corp (RETIRED) JANTX2N6802 vs JANTX2N6802
IRFF430-JQR-B 2.5A, 500V, 1.725ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited JANTX2N6802 vs IRFF430-JQR-B
JANTXV2N6802 Small Signal Field-Effect Transistor, 2.5A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN Microsemi Corporation JANTX2N6802 vs JANTXV2N6802
2N6802-QR-B Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN TT Electronics Resistors JANTX2N6802 vs 2N6802-QR-B
2N6802-JQR-B Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN TT Electronics Resistors JANTX2N6802 vs 2N6802-JQR-B
2N6802.MOD 2.5A, 500V, 1.725ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited JANTX2N6802 vs 2N6802.MOD
Part Number Description Manufacturer Compare
JANTX2N6802 Power Field-Effect Transistor, 2.5A I(D), 500V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-205AF, 3 PIN Infineon Technologies AG JANTX2N6802 vs JANTX2N6802
JANTXV2N6802 Power Field-Effect Transistor, 2.5A I(D), 500V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-205AF, 3 PIN Infineon Technologies AG JANTX2N6802 vs JANTXV2N6802
JANTX2N6802 Power Field-Effect Transistor, 3.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Defense Logistics Agency JANTX2N6802 vs JANTX2N6802
2N6802 Power Field-Effect Transistor, 2.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Unitrode Corp (RETIRED) JANTX2N6802 vs 2N6802
IRFF430-JQR-B 2.5A, 500V, 1.725ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited JANTX2N6802 vs IRFF430-JQR-B
2N6802-QR-B 2.5A, 500V, 1.725ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited JANTX2N6802 vs 2N6802-QR-B
2N6802-JQR-B 2.5A, 500V, 1.725ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited JANTX2N6802 vs 2N6802-JQR-B
2N6802 2.5A, 500V, 1.725ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited JANTX2N6802 vs 2N6802
2N6802 Power Field-Effect Transistor, 3.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF Harris Semiconductor JANTX2N6802 vs 2N6802
IRFF430-JQR-BR1 2.5A, 500V, 1.725ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited JANTX2N6802 vs IRFF430-JQR-BR1

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