Part Details for IRFF430-JQR-BR1 by TT Electronics Power and Hybrid / Semelab Limited
Overview of IRFF430-JQR-BR1 by TT Electronics Power and Hybrid / Semelab Limited
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRFF430-JQR-BR1
IRFF430-JQR-BR1 CAD Models
IRFF430-JQR-BR1 Part Data Attributes
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IRFF430-JQR-BR1
TT Electronics Power and Hybrid / Semelab Limited
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Datasheet
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IRFF430-JQR-BR1
TT Electronics Power and Hybrid / Semelab Limited
2.5A, 500V, 1.725ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | SEMELAB LTD | |
Part Package Code | BCY | |
Package Description | CYLINDRICAL, O-MBCY-W3 | |
Pin Count | 2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 0.35 mJ | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 2.5 A | |
Drain-source On Resistance-Max | 1.725 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-205AF | |
JESD-30 Code | O-MBCY-W3 | |
JESD-609 Code | e1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 11 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN SILVER COPPER | |
Terminal Form | WIRE | |
Terminal Position | BOTTOM | |
Transistor Element Material | SILICON |
Alternate Parts for IRFF430-JQR-BR1
This table gives cross-reference parts and alternative options found for IRFF430-JQR-BR1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFF430-JQR-BR1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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JANTX2N6802 | Power Field-Effect Transistor, 3.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | Harris Semiconductor | IRFF430-JQR-BR1 vs JANTX2N6802 |
IRFF430 | Power Field-Effect Transistor, 2.75A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | Fairchild Semiconductor Corporation | IRFF430-JQR-BR1 vs IRFF430 |
2N6802 | Power Field-Effect Transistor, 2.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | Unitrode Corporation | IRFF430-JQR-BR1 vs 2N6802 |
2N6802 | 2.5A, 500V, 1.725ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRFF430-JQR-BR1 vs 2N6802 |
JANTX2N6802 | Power Field-Effect Transistor, 2.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | Unitrode Corp (RETIRED) | IRFF430-JQR-BR1 vs JANTX2N6802 |
IRFF430-JQR-B | 2.5A, 500V, 1.725ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRFF430-JQR-BR1 vs IRFF430-JQR-B |
JANTXV2N6802 | Small Signal Field-Effect Transistor, 2.5A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | Microsemi Corporation | IRFF430-JQR-BR1 vs JANTXV2N6802 |
2N6802-QR-B | Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | TT Electronics Resistors | IRFF430-JQR-BR1 vs 2N6802-QR-B |
JANTX2N6802 | Power Field-Effect Transistor, 2.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | Unitrode Corporation | IRFF430-JQR-BR1 vs JANTX2N6802 |
2N6802-JQR-B | Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | TT Electronics Resistors | IRFF430-JQR-BR1 vs 2N6802-JQR-B |