Part Details for JANTX2N6849 by Harris Semiconductor
Overview of JANTX2N6849 by Harris Semiconductor
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Price & Stock for JANTX2N6849
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 1 |
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RFQ | ||
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Quest Components | MOSFET Transistor, P-Channel, TO-205AF | 2 |
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$17.0625 | Buy Now |
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Quest Components | MOSFET Transistor, P-Channel, TO-205AF | 2 |
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$56.9600 | Buy Now |
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Quest Components | MOSFET Transistor, P-Channel, TO-205AF | 1 |
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$11.6000 | Buy Now |
Part Details for JANTX2N6849
JANTX2N6849 CAD Models
JANTX2N6849 Part Data Attributes
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JANTX2N6849
Harris Semiconductor
Buy Now
Datasheet
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Compare Parts:
JANTX2N6849
Harris Semiconductor
Small Signal Field-Effect Transistor, 6.5A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
Package Description | TO-39, 3 PIN | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 500 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 6.5 A | |
Drain-source On Resistance-Max | 0.3 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 100 pF | |
JEDEC-95 Code | TO-205AF | |
JESD-30 Code | O-MBCY-W3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 25 W | |
Pulsed Drain Current-Max (IDM) | 25 A | |
Qualification Status | Not Qualified | |
Reference Standard | MIL-19500 | |
Surface Mount | NO | |
Terminal Form | WIRE | |
Terminal Position | BOTTOM | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 280 ns | |
Turn-on Time-Max (ton) | 200 ns |