Part Details for JANTXV1N5621US by Microchip Technology Inc
Overview of JANTXV1N5621US by Microchip Technology Inc
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for JANTXV1N5621US
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
32AJ1914
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Newark | Ufr, frr A-Body Sq. Melf Rohs Compliant: Yes |Microchip JANTXV1N5621US RoHS: Compliant Min Qty: 102 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$12.8800 / $13.3900 | Buy Now |
DISTI #
JANTXV1N5621US
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Avnet Americas | Diode Fast Recovery Rectifier 800V 1A 2-Pin D-5A - Bulk (Alt: JANTXV1N5621US) RoHS: Not Compliant Min Qty: 102 Package Multiple: 1 Lead time: 24 Weeks, 0 Days Container: Bulk | 0 |
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$12.8800 / $14.4200 | Buy Now |
DISTI #
JANTXV1N5621US
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Microchip Technology Inc | UFR,FRR _ A-Body Sq. Melf, Projected EOL: 2049-02-05 RoHS: Compliant pbFree: Yes |
0 Alternates Available |
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$14.4200 | Buy Now |
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Onlinecomponents.com | RoHS: Compliant | 0 |
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$12.7000 / $26.2700 | Buy Now |
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NAC | Rectifier RoHS: Compliant Min Qty: 24 Package Multiple: 1 | 0 |
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$12.5600 / $14.7100 | Buy Now |
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Master Electronics | RoHS: Compliant | 0 |
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$12.7000 / $26.2700 | Buy Now |
Part Details for JANTXV1N5621US
JANTXV1N5621US CAD Models
JANTXV1N5621US Part Data Attributes
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JANTXV1N5621US
Microchip Technology Inc
Buy Now
Datasheet
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Compare Parts:
JANTXV1N5621US
Microchip Technology Inc
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1A, 800V V(RRM), Silicon
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Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
Package Description | HERMETIC SEALED, GLASS PACKAGE-2 | |
Reach Compliance Code | compliant | |
Factory Lead Time | 24 Weeks | |
Additional Feature | HIGH RELIABILITY | |
Application | GENERAL PURPOSE | |
Case Connection | ISOLATED | |
Configuration | SINGLE | |
Diode Element Material | SILICON | |
Diode Type | RECTIFIER DIODE | |
JESD-30 Code | O-LELF-R2 | |
Number of Elements | 1 | |
Number of Phases | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -65 °C | |
Output Current-Max | 1 A | |
Package Body Material | GLASS | |
Package Shape | ROUND | |
Package Style | LONG FORM | |
Qualification Status | Qualified | |
Reference Standard | MIL-19500 | |
Rep Pk Reverse Voltage-Max | 800 V | |
Reverse Recovery Time-Max | 0.3 µs | |
Surface Mount | YES | |
Technology | AVALANCHE | |
Terminal Form | WRAP AROUND | |
Terminal Position | END |
Alternate Parts for JANTXV1N5621US
This table gives cross-reference parts and alternative options found for JANTXV1N5621US. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTXV1N5621US, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BYM12-300-E3/96 | Rectifier Diode, 1 Phase, 1 Element, 1A, 300V V(RRM), Silicon, DO-213AB, | Vishay Intertechnologies | JANTXV1N5621US vs BYM12-300-E3/96 |
BYM13-30-E3/97 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 30V V(RRM), Silicon, DO-213AB, | Vishay Intertechnologies | JANTXV1N5621US vs BYM13-30-E3/97 |
BYM13-30-E3/96 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 30V V(RRM), Silicon, DO-213AB, | Vishay Intertechnologies | JANTXV1N5621US vs BYM13-30-E3/96 |
JANTX1N5621US | Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2 | Sensitron Semiconductors | JANTXV1N5621US vs JANTX1N5621US |
EGL41G-E3/96 | Rectifier Diode, 1 Phase, 1 Element, 1A, 400V V(RRM), Silicon, DO-213AB, | Vishay Intertechnologies | JANTXV1N5621US vs EGL41G-E3/96 |
SGL41-30-E3/96 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 30V V(RRM), Silicon, DO-213AB, | Vishay Intertechnologies | JANTXV1N5621US vs SGL41-30-E3/96 |
EGL41G-E3/97 | Rectifier Diode, 1 Phase, 1 Element, 1A, 400V V(RRM), Silicon, DO-213AB, | Vishay Intertechnologies | JANTXV1N5621US vs EGL41G-E3/97 |
BYM12-400-E3/97 | Rectifier Diode, 1 Phase, 1 Element, 1A, 400V V(RRM), Silicon, DO-213AB, | Vishay Intertechnologies | JANTXV1N5621US vs BYM12-400-E3/97 |
1N5621US | Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2 | Sensitron Semiconductors | JANTXV1N5621US vs 1N5621US |
BYM12-400-E3/96 | Rectifier Diode, 1 Phase, 1 Element, 1A, 400V V(RRM), Silicon, DO-213AB, | Vishay Intertechnologies | JANTXV1N5621US vs BYM12-400-E3/96 |