Memory
K7I161882B-EI300
Samsung Semiconductor
Description: DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165

Overview of K7I161882B-EI300 by Samsung Semiconductor

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Part Data Attributes for K7I161882B-EI300 by Samsung Semiconductor

K7I161882B-EI300
Samsung Semiconductor
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
Part Package Code
BGA
Package Description
LBGA, BGA165,11X15,40
Pin Count
165
Reach Compliance Code
compliant
ECCN Code
3A991.B.2.A
HTS Code
8542.32.00.41
Access Time-Max
0.45 ns
Additional Feature
PIPELINED ARCHITECTURE
Clock Frequency-Max (fCLK)
300 MHz
I/O Type
COMMON
JESD-30 Code
R-PBGA-B165
JESD-609 Code
e1
Length
15 mm
Memory Density
18874368 bit
Memory IC Type
DDR SRAM
Memory Width
18
Moisture Sensitivity Level
2
Number of Functions
1
Number of Terminals
165
Number of Words
1048576 words
Number of Words Code
1000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
85 °C
Operating Temperature-Min
-40 °C
Organization
1MX18
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
Package Code
LBGA
Package Equivalence Code
BGA165,11X15,40
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, LOW PROFILE
Parallel/Serial
PARALLEL
Qualification Status
Not Qualified
Seated Height-Max
1.4 mm
Standby Current-Max
0.23 A
Standby Voltage-Min
1.7 V
Supply Current-Max
0.5 mA
Supply Voltage-Max (Vsup)
1.9 V
Supply Voltage-Min (Vsup)
1.7 V
Supply Voltage-Nom (Vsup)
1.8 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
INDUSTRIAL
Terminal Finish
TIN SILVER COPPER
Terminal Form
BALL
Terminal Pitch
1 mm
Terminal Position
BOTTOM
Width
13 mm
Want to compare parts?
  1. K7I161882B-EI300
    Samsung Semiconductor
    DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165
    VS

Alternate Parts for K7I161882B-EI300

This table gives cross-reference parts and alternative options found for K7I161882B-EI300. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K7I161882B-EI300, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
K7I161882B-FC300 DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165 Samsung Semiconductor K7I161882B-EI300 vs K7I161882B-FC300
K7I161882B-FC30T Standard SRAM, 1MX18, 0.45ns, CMOS, PBGA165 Samsung Semiconductor K7I161882B-EI300 vs K7I161882B-FC30T
CY7C1318JV18-300BZXI DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor K7I161882B-EI300 vs CY7C1318JV18-300BZXI
K7I161882B-EC30T Standard SRAM, 1MX18, 0.45ns, CMOS, PBGA165 Samsung Semiconductor K7I161882B-EI300 vs K7I161882B-EC30T
K7I161882B-EC300 DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165 Samsung Semiconductor K7I161882B-EI300 vs K7I161882B-EC300
CY7C1318JV18-300BZI DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor K7I161882B-EI300 vs CY7C1318JV18-300BZI
K7I161882B-FI30T DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165 Samsung Semiconductor K7I161882B-EI300 vs K7I161882B-FI30T
Part Number Description Manufacturer Compare
K7I161882B-FI30T DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165 Samsung Semiconductor K7I161882B-EI300 vs K7I161882B-FI30T
K7I161882B-EC300 DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165 Samsung Semiconductor K7I161882B-EI300 vs K7I161882B-EC300
K7I161882B-FC300 DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165 Samsung Semiconductor K7I161882B-EI300 vs K7I161882B-FC300
CY7C1318JV18-300BZXI DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor K7I161882B-EI300 vs CY7C1318JV18-300BZXI
CY7C1318JV18-300BZC DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor K7I161882B-EI300 vs CY7C1318JV18-300BZC

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