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Memory / SRAMs / K7I323682M-FC25
Datasheets
K7I323682M-FC25 by: Samsung Semiconductor

DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165

Part Details for K7I323682M-FC25 by Samsung Semiconductor

Overview of K7I323682M-FC25 by Samsung Semiconductor

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Part Details for K7I323682M-FC25

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K7I323682M-FC25 Part Data Attributes

Parametric Data
K7I323682M-FC25 Samsung Semiconductor
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K7I323682M-FC25 Samsung Semiconductor DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Part Package Code BGA
Package Description LBGA, BGA165,11X15,40
Pin Count 165
Reach Compliance Code unknown
ECCN Code 3A991.B.2.A
HTS Code 8542.32.00.41
Access Time-Max 0.45 ns
Additional Feature PIPELINED ARCHITECTURE
Clock Frequency-Max (fCLK) 250 MHz
I/O Type COMMON
JESD-30 Code R-PBGA-B165
JESD-609 Code e0
Length 17 mm
Memory Density 37748736 bit
Memory IC Type DDR SRAM
Memory Width 36
Number of Functions 1
Number of Terminals 165
Number of Words 1048576 words
Number of Words Code 1000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 1MX36
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code LBGA
Package Equivalence Code BGA165,11X15,40
Package Shape RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE
Parallel/Serial PARALLEL
Qualification Status Not Qualified
Seated Height-Max 1.4 mm
Standby Current-Max 0.2 A
Standby Voltage-Min 1.7 V
Supply Current-Max 0.62 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN LEAD
Terminal Form BALL
Terminal Pitch 1 mm
Terminal Position BOTTOM
Width 15 mm

Alternate Parts for K7I323682M-FC25

This table gives cross-reference parts and alternative options found for K7I323682M-FC25. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K7I323682M-FC25, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
CY7C1420BV18-167BZI DDR SRAM, 1MX36, 0.5ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor K7I323682M-FC25 vs CY7C1420BV18-167BZI
CY7C1420KV18-250BZC DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Infineon Technologies AG K7I323682M-FC25 vs CY7C1420KV18-250BZC
GS8342T36AGE-167IT DDR SRAM, 1MX36, 0.5ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology K7I323682M-FC25 vs GS8342T36AGE-167IT
GS8342T36AE-167I DDR SRAM, 1MX36, 0.5ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 GSI Technology K7I323682M-FC25 vs GS8342T36AE-167I
CY7C1420BV18-200BZI DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor K7I323682M-FC25 vs CY7C1420BV18-200BZI
CY7C1420KV18-250BZI DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor K7I323682M-FC25 vs CY7C1420KV18-250BZI
GS8342T36AGE-250 DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology K7I323682M-FC25 vs GS8342T36AGE-250
GS8342T36AE-200T DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 GSI Technology K7I323682M-FC25 vs GS8342T36AE-200T
CY7C1420AV18-250BZXC DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor K7I323682M-FC25 vs CY7C1420AV18-250BZXC
CY7C1420AV18-167BZXC DDR SRAM, 1MX36, 0.5ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor K7I323682M-FC25 vs CY7C1420AV18-167BZXC
Part Number Description Manufacturer Compare
CY7C1420KV18-250BZXI DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Infineon Technologies AG K7I323682M-FC25 vs CY7C1420KV18-250BZXI
GS8342T36AGE-200 DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology K7I323682M-FC25 vs GS8342T36AGE-200
CY7C1420KV18-250BZXC DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor K7I323682M-FC25 vs CY7C1420KV18-250BZXC
CY7C1420BV18-250BZC DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor K7I323682M-FC25 vs CY7C1420BV18-250BZC
GS8342T36AE-200I DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 GSI Technology K7I323682M-FC25 vs GS8342T36AE-200I
GS8342T36AGE-200I DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology K7I323682M-FC25 vs GS8342T36AGE-200I
CY7C1420AV18-200BZXI DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor K7I323682M-FC25 vs CY7C1420AV18-200BZXI
GS8342T36AGE-167 DDR SRAM, 1MX36, 0.5ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology K7I323682M-FC25 vs GS8342T36AGE-167
K7I323682M-FC250 DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165 Samsung Semiconductor K7I323682M-FC25 vs K7I323682M-FC250
GS8342T36AE-250T DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 GSI Technology K7I323682M-FC25 vs GS8342T36AE-250T

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