Part Details for K7N643645M-EI25T by Samsung Semiconductor
Overview of K7N643645M-EI25T by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Computing and Data Storage
Part Details for K7N643645M-EI25T
K7N643645M-EI25T CAD Models
K7N643645M-EI25T Part Data Attributes
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K7N643645M-EI25T
Samsung Semiconductor
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Datasheet
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K7N643645M-EI25T
Samsung Semiconductor
ZBT SRAM, 2MX36, 2.6ns, CMOS, PBGA165
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Package Description | BGA, BGA165,11X15,40 | |
Reach Compliance Code | unknown | |
ECCN Code | 3A991.B.2.A | |
HTS Code | 8542.32.00.41 | |
Access Time-Max | 2.6 ns | |
Clock Frequency-Max (fCLK) | 250 MHz | |
I/O Type | COMMON | |
JESD-30 Code | R-PBGA-B165 | |
JESD-609 Code | e1 | |
Memory Density | 75497472 bit | |
Memory IC Type | ZBT SRAM | |
Memory Width | 36 | |
Number of Terminals | 165 | |
Number of Words | 2097152 words | |
Number of Words Code | 2000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | -40 °C | |
Organization | 2MX36 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | BGA | |
Package Equivalence Code | BGA165,11X15,40 | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY | |
Parallel/Serial | PARALLEL | |
Qualification Status | Not Qualified | |
Standby Current-Max | 0.13 A | |
Standby Voltage-Min | 2.38 V | |
Supply Current-Max | 0.47 mA | |
Supply Voltage-Nom (Vsup) | 2.5 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | INDUSTRIAL | |
Terminal Finish | TIN SILVER COPPER | |
Terminal Form | BALL | |
Terminal Pitch | 1 mm | |
Terminal Position | BOTTOM |
Alternate Parts for K7N643645M-EI25T
This table gives cross-reference parts and alternative options found for K7N643645M-EI25T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K7N643645M-EI25T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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GS8645Z36T-133T | ZBT SRAM, 2MX36, 8.5ns, CMOS, PQFP100, TQFP-100 | GSI Technology | K7N643645M-EI25T vs GS8645Z36T-133T |
CY7C1480BV25-250BZC | Cache SRAM, 2MX36, 3ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, FBGA-165 | Cypress Semiconductor | K7N643645M-EI25T vs CY7C1480BV25-250BZC |
GS8640E36GT-167T | Cache SRAM, 2MX36, 8ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100 | GSI Technology | K7N643645M-EI25T vs GS8640E36GT-167T |
CY7C1480V25-167AXI | Cache SRAM, 2MX36, 3.4ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, MS-026, TQFP-100 | Cypress Semiconductor | K7N643645M-EI25T vs CY7C1480V25-167AXI |
GS8640ZV36GT-200I | ZBT SRAM, 2MX36, 7.5ns, CMOS, PQFP100, LEAD FREE, TQFP-100 | GSI Technology | K7N643645M-EI25T vs GS8640ZV36GT-200I |
GS8640FZ36T-6.5IVT | ZBT SRAM, 2MX36, 6.5ns, CMOS, PQFP100, TQFP-100 | GSI Technology | K7N643645M-EI25T vs GS8640FZ36T-6.5IVT |
GS864536T-200T | Cache SRAM, 2MX36, 7.5ns, CMOS, PQFP100, TQFP-100 | GSI Technology | K7N643645M-EI25T vs GS864536T-200T |
CY7C1470BV25-250BZXC | ZBT SRAM, 2MX36, 3ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, FBGA-165 | Cypress Semiconductor | K7N643645M-EI25T vs CY7C1470BV25-250BZXC |
GS8642Z36F-300 | ZBT SRAM, 2MX36, 5.5ns, CMOS, PBGA165, 1 MM PITCH, BGA-165 | GSI Technology | K7N643645M-EI25T vs GS8642Z36F-300 |
GS8641ZV36GE-300IT | ZBT SRAM, 2MX36, 5.5ns, CMOS, PBGA165, 17 X 15 MM, 1 MM PITCH, FBGA-165 | GSI Technology | K7N643645M-EI25T vs GS8641ZV36GE-300IT |