Datasheets
K7R323684M-FC25 by: Samsung Semiconductor

QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165

Part Details for K7R323684M-FC25 by Samsung Semiconductor

Overview of K7R323684M-FC25 by Samsung Semiconductor

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Applications Computing and Data Storage

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Part Details for K7R323684M-FC25

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K7R323684M-FC25 Part Data Attributes

K7R323684M-FC25 Samsung Semiconductor
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K7R323684M-FC25 Samsung Semiconductor QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Part Package Code BGA
Package Description LBGA, BGA165,11X15,40
Pin Count 165
Reach Compliance Code unknown
ECCN Code 3A991.B.2.A
HTS Code 8542.32.00.41
Access Time-Max 0.45 ns
Additional Feature PIPELINED ARCHITECTURE
Clock Frequency-Max (fCLK) 250 MHz
I/O Type SEPARATE
JESD-30 Code R-PBGA-B165
JESD-609 Code e0
Length 17 mm
Memory Density 37748736 bit
Memory IC Type QDR SRAM
Memory Width 36
Number of Functions 1
Number of Terminals 165
Number of Words 1048576 words
Number of Words Code 1000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 1MX36
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code LBGA
Package Equivalence Code BGA165,11X15,40
Package Shape RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE
Parallel/Serial PARALLEL
Qualification Status Not Qualified
Seated Height-Max 1.4 mm
Standby Current-Max 0.33 A
Standby Voltage-Min 1.7 V
Supply Current-Max 0.8 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN LEAD
Terminal Form BALL
Terminal Pitch 1 mm
Terminal Position BOTTOM
Width 15 mm

Alternate Parts for K7R323684M-FC25

This table gives cross-reference parts and alternative options found for K7R323684M-FC25. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K7R323684M-FC25, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
CY7C1415AV18-250BZXI QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor K7R323684M-FC25 vs CY7C1415AV18-250BZXI
UPD44325364F5-E40-EQ2-A QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, LEAD FREE, PLASTIC, BGA-165 NEC Electronics Group K7R323684M-FC25 vs UPD44325364F5-E40-EQ2-A
CY7C1415BV18-250BZXC QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor K7R323684M-FC25 vs CY7C1415BV18-250BZXC
CY7C1415BV18-250BZC QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor K7R323684M-FC25 vs CY7C1415BV18-250BZC
CY7C1415AV18-250BZI QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor K7R323684M-FC25 vs CY7C1415AV18-250BZI
CY7C1415BV18-250BZI QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, M0-216, FBGA-165 Cypress Semiconductor K7R323684M-FC25 vs CY7C1415BV18-250BZI
UPD44325364F5-E40-EQ2 QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, PLASTIC, FBGA-165 NEC Electronics Group K7R323684M-FC25 vs UPD44325364F5-E40-EQ2
CY7C1415BV18-250BZXI QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, M0-216, FBGA-165 Cypress Semiconductor K7R323684M-FC25 vs CY7C1415BV18-250BZXI
CY7C1415KV18-250BZXC QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, FBGA-165 Infineon Technologies AG K7R323684M-FC25 vs CY7C1415KV18-250BZXC
Part Number Description Manufacturer Compare
CY7C1415AV18-250BZXI QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor K7R323684M-FC25 vs CY7C1415AV18-250BZXI
UPD44325364F5-E40-EQ2-A QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, LEAD FREE, PLASTIC, BGA-165 NEC Electronics Group K7R323684M-FC25 vs UPD44325364F5-E40-EQ2-A
CY7C1415BV18-250BZXI QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, M0-216, FBGA-165 Cypress Semiconductor K7R323684M-FC25 vs CY7C1415BV18-250BZXI
CY7C1415BV18-250BZC QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor K7R323684M-FC25 vs CY7C1415BV18-250BZC
CY7C1415BV18-250BZI QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, M0-216, FBGA-165 Cypress Semiconductor K7R323684M-FC25 vs CY7C1415BV18-250BZI
UPD44325364F5-E40-EQ2 QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, PLASTIC, FBGA-165 NEC Electronics Group K7R323684M-FC25 vs UPD44325364F5-E40-EQ2
CY7C1415BV18-250BZXC QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor K7R323684M-FC25 vs CY7C1415BV18-250BZXC
CY7C1415KV18-250BZXC QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, FBGA-165 Infineon Technologies AG K7R323684M-FC25 vs CY7C1415KV18-250BZXC
CY7C1415AV18-250BZI QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor K7R323684M-FC25 vs CY7C1415AV18-250BZI

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