Part Details for K7R641884M-EI250 by Samsung Semiconductor
Overview of K7R641884M-EI250 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for K7R641884M-EI250
K7R641884M-EI250 CAD Models
K7R641884M-EI250 Part Data Attributes
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K7R641884M-EI250
Samsung Semiconductor
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Datasheet
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K7R641884M-EI250
Samsung Semiconductor
QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | BGA | |
Package Description | LBGA, BGA165,11X15,40 | |
Pin Count | 165 | |
Reach Compliance Code | unknown | |
ECCN Code | 3A991.B.2.A | |
HTS Code | 8542.32.00.41 | |
Access Time-Max | 0.45 ns | |
Additional Feature | PIPELINED ARCHITECTURE | |
Clock Frequency-Max (fCLK) | 250 MHz | |
I/O Type | SEPARATE | |
JESD-30 Code | R-PBGA-B165 | |
Length | 17 mm | |
Memory Density | 75497472 bit | |
Memory IC Type | QDR SRAM | |
Memory Width | 18 | |
Number of Functions | 1 | |
Number of Terminals | 165 | |
Number of Words | 4194304 words | |
Number of Words Code | 4000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | -40 °C | |
Organization | 4MX18 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | LBGA | |
Package Equivalence Code | BGA165,11X15,40 | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY, LOW PROFILE | |
Parallel/Serial | PARALLEL | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Qualification Status | Not Qualified | |
Seated Height-Max | 1.4 mm | |
Standby Voltage-Min | 1.7 V | |
Supply Voltage-Max (Vsup) | 1.9 V | |
Supply Voltage-Min (Vsup) | 1.7 V | |
Supply Voltage-Nom (Vsup) | 1.8 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | INDUSTRIAL | |
Terminal Form | BALL | |
Terminal Pitch | 1 mm | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Width | 15 mm |
Alternate Parts for K7R641884M-EI250
This table gives cross-reference parts and alternative options found for K7R641884M-EI250. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K7R641884M-EI250, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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CY7C1513JV18-250BZI | QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | Cypress Semiconductor | K7R641884M-EI250 vs CY7C1513JV18-250BZI |
GS8662D18BD-250I | QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, FPBGA-165 | GSI Technology | K7R641884M-EI250 vs GS8662D18BD-250I |
CY7C1513V18-250BZI | QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | Cypress Semiconductor | K7R641884M-EI250 vs CY7C1513V18-250BZI |
GS8662D18BGD-250IT | QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 | GSI Technology | K7R641884M-EI250 vs GS8662D18BGD-250IT |
CY7C1513KV18-250BZXI | QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 | Cypress Semiconductor | K7R641884M-EI250 vs CY7C1513KV18-250BZXI |
CY7C1513AV18-250BZXI | QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 | Cypress Semiconductor | K7R641884M-EI250 vs CY7C1513AV18-250BZXI |
GS8672D18BE-250I | Standard SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 | GSI Technology | K7R641884M-EI250 vs GS8672D18BE-250I |
K7R641884M-FI250 | QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165 | Samsung Semiconductor | K7R641884M-EI250 vs K7R641884M-FI250 |
GS8662D18E-250IT | DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 | GSI Technology | K7R641884M-EI250 vs GS8662D18E-250IT |
CY7C1513JV18-250BZXI | QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 | Cypress Semiconductor | K7R641884M-EI250 vs CY7C1513JV18-250BZXI |