Datasheets
K7S3218U4C-EI330 by: Samsung Semiconductor

QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165

Part Details for K7S3218U4C-EI330 by Samsung Semiconductor

Overview of K7S3218U4C-EI330 by Samsung Semiconductor

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Applications Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Entertainment and Gaming

Part Details for K7S3218U4C-EI330

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K7S3218U4C-EI330 Part Data Attributes:

K7S3218U4C-EI330 Samsung Semiconductor
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K7S3218U4C-EI330 Samsung Semiconductor QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Part Package Code BGA
Package Description LBGA, BGA165,11X15,40
Pin Count 165
Reach Compliance Code compliant
ECCN Code 3A991.B.2.A
HTS Code 8542.32.00.41
Access Time-Max 0.45 ns
Additional Feature PIPELINED ARCHITECTURE
Clock Frequency-Max (fCLK) 333 MHz
I/O Type SEPARATE
JESD-30 Code R-PBGA-B165
Length 17 mm
Memory Density 37748736 bit
Memory IC Type QDR SRAM
Memory Width 18
Moisture Sensitivity Level 3
Number of Functions 1
Number of Terminals 165
Number of Words 2097152 words
Number of Words Code 2000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 2MX18
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code LBGA
Package Equivalence Code BGA165,11X15,40
Package Shape RECTANGULAR
Package Style GRID ARRAY
Parallel/Serial PARALLEL
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Seated Height-Max 1.4 mm
Standby Current-Max 0.3 A
Standby Voltage-Min 1.7 V
Supply Current-Max 0.85 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Form BALL
Terminal Pitch 1 mm
Terminal Position BOTTOM
Width 15 mm

Alternate Parts for K7S3218U4C-EI330

This table gives cross-reference parts and alternative options found for K7S3218U4C-EI330. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K7S3218U4C-EI330, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
K7S3218U4C-FI330 QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165 Samsung Semiconductor K7S3218U4C-EI330 vs K7S3218U4C-FI330
K7S3218U4C-FC330 QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165 Samsung Semiconductor K7S3218U4C-EI330 vs K7S3218U4C-FC330
Part Number Description Manufacturer Compare
CY7C1414BV18-250BZXI QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor K7S3218U4C-EI330 vs CY7C1414BV18-250BZXI
CY7C1412KV18-250BZI QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor K7S3218U4C-EI330 vs CY7C1412KV18-250BZI
K7S3218T4C-EI330 QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165 Samsung Semiconductor K7S3218U4C-EI330 vs K7S3218T4C-EI330
CY7C1414BV18-250BZI QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor K7S3218U4C-EI330 vs CY7C1414BV18-250BZI
UPD44325362F5-E40-EQ2-A QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 15 MM, LEAD FREE,PLASTIC, BGA-165 NEC Electronics Group K7S3218U4C-EI330 vs UPD44325362F5-E40-EQ2-A
CY7C1412KV18-250BZC QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, FBGA-165 Infineon Technologies AG K7S3218U4C-EI330 vs CY7C1412KV18-250BZC
CY7C1412KV18-250BZXI QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, FBGA-165 Infineon Technologies AG K7S3218U4C-EI330 vs CY7C1412KV18-250BZXI
CY7C1412BV18-250BZXC QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor K7S3218U4C-EI330 vs CY7C1412BV18-250BZXC
K7R323682M-FC250 QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165 Samsung Semiconductor K7S3218U4C-EI330 vs K7R323682M-FC250
CY7C1412BV18-250BZI QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor K7S3218U4C-EI330 vs CY7C1412BV18-250BZI

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