Part Details for LET9045F by STMicroelectronics
Results Overview of LET9045F by STMicroelectronics
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (0 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Renewable Energy
LET9045F Information
LET9045F by STMicroelectronics is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for LET9045F
| Part # | Distributor | Description | Stock | Price | Buy | |
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STMicroelectronics | RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs COO: Morocco RoHS: Compliant Min Qty: 1 | 0 |
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$70.2000 / $74.4000 | Buy Now |
Part Details for LET9045F
LET9045F CAD Models
LET9045F Part Data Attributes
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LET9045F
STMicroelectronics
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Datasheet
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LET9045F
STMicroelectronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Package Description | Rohs Compliant, Plastic, M250, 2 Pin | |
| Pin Count | 2 | |
| ECCN Code | EAR99 | |
| Case Connection | Source | |
| Configuration | Single | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 9 A | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 0.8 Pf | |
| Highest Frequency Band | Ultra High Frequency Band | |
| JESD-30 Code | R-PDFP-F2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flatpack | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 108 W | |
| Power Gain-Min (Gp) | 16.5 Db | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Form | Flat | |
| Terminal Position | Dual | |
| Transistor Application | Amplifier | |
| Transistor Element Material | Silicon |
LET9045F Frequently Asked Questions (FAQ)
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STMicroelectronics recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended, and the thermal pad should be connected to a ground plane to reduce thermal resistance.
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To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including junction temperature (Tj) and ambient temperature (Ta). Additionally, consider using a heat sink or thermal interface material to reduce the thermal resistance between the device and the PCB.
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The maximum allowed voltage on the input pins of LET9045F is 5.5V, which is the absolute maximum rating. However, it's recommended to keep the input voltage within the recommended operating range of 4.5V to 5.5V to ensure reliable operation and prevent damage to the device.
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The LET9045F has built-in ESD protection, but it's still essential to follow proper ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure that the PCB and components are properly grounded to prevent static electricity damage.
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The recommended power-up sequence for the LET9045F is to apply the power supply voltage (VCC) before applying the input signals. This ensures that the internal voltage regulators and bias circuits are properly initialized before the device starts operating.