Part Details for LET9060C by STMicroelectronics
Results Overview of LET9060C by STMicroelectronics
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (0 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Healthcare
Medical Imaging
LET9060C Information
LET9060C by STMicroelectronics is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for LET9060C
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
497-12492-ND
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DigiKey | RF MOSFET LDMOS 28V M243 Min Qty: 50 Container: Box |
0 Box |
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$73.7500 | Buy Now |
Part Details for LET9060C
LET9060C CAD Models
LET9060C Part Data Attributes
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LET9060C
STMicroelectronics
Buy Now
Datasheet
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LET9060C
STMicroelectronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Package Description | Rohs Compliant, Plastic, M243, 2 Pin | |
| Pin Count | 2 | |
| ECCN Code | EAR99 | |
| Case Connection | Source | |
| Configuration | Single | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 12 A | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 1.2 Pf | |
| Highest Frequency Band | Ultra High Frequency Band | |
| JESD-30 Code | R-PDFM-F2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 118 W | |
| Power Gain-Min (Gp) | 16 Db | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Form | Flat | |
| Terminal Position | Dual | |
| Transistor Application | Amplifier | |
| Transistor Element Material | Silicon |
LET9060C Frequently Asked Questions (FAQ)
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STMicroelectronics provides a recommended PCB layout in the application note AN1825, which includes guidelines for thermal pad connection, copper pouring, and via placement to ensure optimal thermal performance.
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To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, use a suitable thermal interface material, and ensure good thermal conduction between the device and the heat sink. Additionally, consider using a thermistor or thermal sensor to monitor the device temperature.
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Although the datasheet specifies the recommended operating voltage range, it's essential to note that the maximum allowed voltage on the input pins is 6V, exceeding which can cause damage to the device.
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To prevent electrostatic discharge (ESD) damage, follow proper ESD handling and assembly procedures, such as using ESD-safe materials, grounding straps, and ionizers. Ensure that the device is stored in an ESD-safe environment and handled by personnel wearing ESD-protective clothing.
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The critical timing parameters for the LET9060C include the rise and fall times, propagation delay, and pulse width. These parameters are crucial for ensuring proper operation and should be carefully considered during design and layout.