Datasheets
LMN200B01-7 by: Diodes Incorporated

Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6

Part Details for LMN200B01-7 by Diodes Incorporated

Overview of LMN200B01-7 by Diodes Incorporated

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Applications Consumer Electronics

Part Details for LMN200B01-7

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LMN200B01-7 Part Data Attributes

LMN200B01-7 Diodes Incorporated
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LMN200B01-7 Diodes Incorporated Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer DIODES INC
Package Description GREEN, PLASTIC PACKAGE-6
Pin Count 6
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Diodes Incorporated
Additional Feature BUILT IN BIAS RESISTOR
Collector Current-Max (IC) 0.2 A
Configuration SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR AND RESISTOR
DC Current Gain-Min (hFE) 60
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 0.115 A
Drain-source On Resistance-Max 2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 5 pF
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.3 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
VCEsat-Max 0.3 V

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