There are no models available for this part yet.
Overview of MG100H2DL2 by Toshiba America Electronic Components
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 5 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Environmental Monitoring
Industrial Automation
CAD Models for MG100H2DL2 by Toshiba America Electronic Components
Part Data Attributes for MG100H2DL2 by Toshiba America Electronic Components
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Part Life Cycle Code
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Obsolete
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Ihs Manufacturer
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TOSHIBA CORP
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Package Description
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FLANGE MOUNT, R-PUFM-X6
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Pin Count
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6
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Reach Compliance Code
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unknown
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ECCN Code
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EAR99
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Case Connection
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ISOLATED
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Collector Current-Max (IC)
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100 A
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Collector-Emitter Voltage-Max
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550 V
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Configuration
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2 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
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DC Current Gain-Min (hFE)
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80
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JESD-30 Code
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R-PUFM-X6
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Number of Elements
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2
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Number of Terminals
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6
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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FLANGE MOUNT
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Polarity/Channel Type
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NPN
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Qualification Status
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Not Qualified
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Surface Mount
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NO
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Terminal Form
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UNSPECIFIED
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Terminal Position
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UPPER
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Transistor Application
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SWITCHING
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Transistor Element Material
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SILICON
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Alternate Parts for MG100H2DL2
This table gives cross-reference parts and alternative options found for MG100H2DL2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MG100H2DL2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2DI100D-050 | Power Bipolar Transistor, 100A I(C), 600V V(BR)CEO, 2-Element, NPN, Silicon, M205, 9 PIN | Fuji Electric Co Ltd | MG100H2DL2 vs 2DI100D-050 |
| KD324510 | Power Bipolar Transistor, 100A I(C), 450V V(BR)CEO, 2-Element, NPN, Silicon | Powerex Power Semiconductors | MG100H2DL2 vs KD324510 |
| KT224510 | Power Bipolar Transistor, 100A I(C), 600V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 6 Pin, D38, 6 PIN | Powerex Power Semiconductors | MG100H2DL2 vs KT224510 |
| MG100G2CL1 | TRANSISTOR 100 A, 450 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR, 2-68A1A, 5 PIN, BIP General Purpose Power | Toshiba America Electronic Components | MG100H2DL2 vs MG100G2CL1 |
| EVL31-055 | Power Bipolar Transistor, 100A I(C), 600V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 6 Pin, M203, 6 PIN | Fuji Electric Co Ltd | MG100H2DL2 vs EVL31-055 |