Part Details for MG50Q2YS50 by Toshiba America Electronic Components
Overview of MG50Q2YS50 by Toshiba America Electronic Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for MG50Q2YS50
MG50Q2YS50 CAD Models
MG50Q2YS50 Part Data Attributes
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MG50Q2YS50
Toshiba America Electronic Components
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Datasheet
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MG50Q2YS50
Toshiba America Electronic Components
TRANSISTOR 78 A, 1200 V, N-CHANNEL IGBT, 2-94D4A, 7 PIN, Insulated Gate BIP Transistor
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | FLANGE MOUNT, R-XUFM-X7 | |
Pin Count | 7 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | Toshiba | |
Additional Feature | HIGH SPEED | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 78 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
Fall Time-Max (tf) | 300 ns | |
Gate-Emitter Thr Voltage-Max | 6 V | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X7 | |
Number of Elements | 2 | |
Number of Terminals | 7 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 400 W | |
Power Dissipation-Max (Abs) | 400 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | MOTOR CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 600 ns | |
Turn-on Time-Nom (ton) | 200 ns | |
VCEsat-Max | 3.6 V |
Alternate Parts for MG50Q2YS50
This table gives cross-reference parts and alternative options found for MG50Q2YS50. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MG50Q2YS50, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BSM50GB120DN2HOSA1 | Insulated Gate Bipolar Transistor, 78A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | MG50Q2YS50 vs BSM50GB120DN2HOSA1 |
MG25Q2YS40 | TRANSISTOR 25 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG50Q2YS50 vs MG25Q2YS40 |
MG75Q2YS50 | TRANSISTOR 100 A, 1200 V, N-CHANNEL IGBT, 2-94D4A, 7 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG50Q2YS50 vs MG75Q2YS50 |
C67076-A2106-A70 | Insulated Gate Bipolar Transistor, 105A I(C), 1200V V(BR)CES, N-Channel, | Eupec Gmbh & Co Kg | MG50Q2YS50 vs C67076-A2106-A70 |
2MBI75L-120 | Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, M216, 7 PIN | Fuji Electric Co Ltd | MG50Q2YS50 vs 2MBI75L-120 |
2MBI50N-120 | Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, M232, 7 PIN | Fuji Electric Co Ltd | MG50Q2YS50 vs 2MBI50N-120 |
MG50Q2YS91 | TRANSISTOR 50 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG50Q2YS50 vs MG50Q2YS91 |
MG75Q2YS42 | TRANSISTOR 75 A, 1200 V, N-CHANNEL IGBT, 2-108A2A, 7 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG50Q2YS50 vs MG75Q2YS42 |
BSM50GB120DN2 | Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | MG50Q2YS50 vs BSM50GB120DN2 |
CM75DU-24H | Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, | Mitsubishi Electric | MG50Q2YS50 vs CM75DU-24H |