Part Details for MG50Q2YS91 by Toshiba America Electronic Components
Overview of MG50Q2YS91 by Toshiba America Electronic Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Electronic Manufacturing
Part Details for MG50Q2YS91
MG50Q2YS91 CAD Models
MG50Q2YS91 Part Data Attributes
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MG50Q2YS91
Toshiba America Electronic Components
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Datasheet
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MG50Q2YS91
Toshiba America Electronic Components
TRANSISTOR 50 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | FLANGE MOUNT, R-PUFM-X7 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Collector Current-Max (IC) | 50 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 1000 ns | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-PUFM-X7 | |
| Number of Elements | 2 | |
| Number of Terminals | 7 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 400 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| VCEsat-Max | 2.7 V |
Alternate Parts for MG50Q2YS91
This table gives cross-reference parts and alternative options found for MG50Q2YS91. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MG50Q2YS91, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MG75Q2YS40 | TRANSISTOR 75 A, 1200 V, N-CHANNEL IGBT, 2-94D1A, 7 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG50Q2YS91 vs MG75Q2YS40 |
| BSM50GB120DN2 | Insulated Gate Bipolar Transistor, 78A I(C), 1200V V(BR)CES, N-Channel, | Siemens | MG50Q2YS91 vs BSM50GB120DN2 |
| MG50Q2YS50 | TRANSISTOR 78 A, 1200 V, N-CHANNEL IGBT, 2-94D4A, 7 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG50Q2YS91 vs MG50Q2YS50 |
| CM50DU-24F | Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, | Mitsubishi Electric | MG50Q2YS91 vs CM50DU-24F |
| 2MBI75F-120 | Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, M216, 7 PIN | Fuji Electric Co Ltd | MG50Q2YS91 vs 2MBI75F-120 |
| 2MBI75N-120 | Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Fuji Electric Co Ltd | MG50Q2YS91 vs 2MBI75N-120 |
| MG75Q2YS42 | TRANSISTOR 75 A, 1200 V, N-CHANNEL IGBT, 2-108A2A, 7 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG50Q2YS91 vs MG75Q2YS42 |
| BSM75GB120DN2 | Insulated Gate Bipolar Transistor, 105A I(C), 1200V V(BR)CES, N-Channel, | Siemens | MG50Q2YS91 vs BSM75GB120DN2 |
| MG25Q2YS91 | TRANSISTOR 25 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG50Q2YS91 vs MG25Q2YS91 |
| CM75DU-24H | Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, | Mitsubishi Electric | MG50Q2YS91 vs CM75DU-24H |