Part Details for MJD112-001G by onsemi
Overview of MJD112-001G by onsemi
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
RAA220001GNP#HA0 | Renesas Electronics Corporation | Synchronous Rectified Buck MOSFET Driver | |
RAJ306001GNP#HA1 | Renesas Electronics Corporation | General Purpose Motor Control IC | |
TS3001GB2A0NCG | Renesas Electronics Corporation | Dual even local temperature sensor |
Part Details for MJD112-001G
MJD112-001G CAD Models
MJD112-001G Part Data Attributes
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MJD112-001G
onsemi
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Datasheet
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Compare Parts:
MJD112-001G
onsemi
2A, 100V, NPN, Si, POWER TRANSISTOR, LEAD FREE, CASE 369D-01, DPAK-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ON SEMICONDUCTOR | |
Package Description | IN-LINE, R-PSIP-T3 | |
Pin Count | 3 | |
Manufacturer Package Code | CASE 369D-01 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 2 A | |
Collector-Emitter Voltage-Max | 100 V | |
Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | |
DC Current Gain-Min (hFE) | 200 | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | NPN | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 25 MHz |
Alternate Parts for MJD112-001G
This table gives cross-reference parts and alternative options found for MJD112-001G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MJD112-001G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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MJD112-1G | 2.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK INSERTION MOUNT, 75-TUBE | onsemi | MJD112-001G vs MJD112-1G |