Part Details for MJD44H11 by Motorola Semiconductor Products
Overview of MJD44H11 by Motorola Semiconductor Products
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for MJD44H11
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 59 |
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RFQ | ||
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Quest Components | Bipolar Junction Transistor, NPN Type, TO-252 | 3 |
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$0.5400 | Buy Now |
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Quest Components | Bipolar Junction Transistor, NPN Type, TO-252 | 1275 |
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$0.2366 / $0.9100 | Buy Now |
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Quest Components | Bipolar Junction Transistor, NPN Type, TO-252 | 84 |
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$0.5000 / $1.0000 | Buy Now |
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Chip 1 Exchange | INSTOCK | 3744 |
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RFQ | |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 38 |
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$0.7500 / $1.1500 | Buy Now |
Part Details for MJD44H11
MJD44H11 CAD Models
MJD44H11 Part Data Attributes
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MJD44H11
Motorola Semiconductor Products
Buy Now
Datasheet
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MJD44H11
Motorola Semiconductor Products
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MOTOROLA INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 8 A | |
| Collector-Emitter Voltage-Max | 80 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 40 | |
| JESD-30 Code | R-PDSO-G2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | NPN | |
| Power Dissipation Ambient-Max | 20 W | |
| Power Dissipation-Max (Abs) | 20 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 50 MHz | |
| Turn-off Time-Max (toff) | 640 ns | |
| VCEsat-Max | 1 V |