Datasheets
MJE802PBFREE by: Central Semiconductor Corp

Power Bipolar Transistor,

Part Details for MJE802PBFREE by Central Semiconductor Corp

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MJE802PBFREE Part Data Attributes

MJE802PBFREE Central Semiconductor Corp
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MJE802PBFREE Central Semiconductor Corp Power Bipolar Transistor,
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer CENTRAL SEMICONDUCTOR CORP
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Date Of Intro 2018-01-31
Collector Current-Max (IC) 4 A
Collector-Emitter Voltage-Max 80 V
Configuration DARLINGTON
DC Current Gain-Min (hFE) 750
JEDEC-95 Code TO-126
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 40 W
Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 1 MHz
VCEsat-Max 2.5 V

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