Part Details for MJF122 by Motorola Semiconductor Products
Overview of MJF122 by Motorola Semiconductor Products
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Education and Research
Internet of Things (IoT)
Computing and Data Storage
Aerospace and Defense
Healthcare
Telecommunications
Automotive
Price & Stock for MJF122
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | Bipolar Junction Transistor, Darlington, NPN Type, SOT-186VAR | 37 |
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$0.4353 / $0.5223 | Buy Now |
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Quest Components | Bipolar Junction Transistor, Darlington, NPN Type, SOT-186VAR | 12 |
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$1.6000 / $2.0000 | Buy Now |
Part Details for MJF122
MJF122 CAD Models
MJF122 Part Data Attributes
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MJF122
Motorola Semiconductor Products
Buy Now
Datasheet
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MJF122
Motorola Semiconductor Products
Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | MOTOROLA INC | |
Package Description | TO-220, 3 PIN | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 5 A | |
Collector-Base Capacitance-Max | 200 pF | |
Collector-Emitter Voltage-Max | 100 V | |
Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | |
DC Current Gain-Min (hFE) | 2000 | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | NPN | |
Power Dissipation Ambient-Max | 30 W | |
Power Dissipation-Max (Abs) | 30 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 4 MHz | |
VCEsat-Max | 3.5 V |