Part Details for MMDF2P02HDR2G by onsemi
Overview of MMDF2P02HDR2G by onsemi
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Automotive
Price & Stock for MMDF2P02HDR2G
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
73AK6422
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Newark | Mosfet, P, 20V, Soic-8 |Onsemi MMDF2P02HDR2G RoHS: Not Compliant Min Qty: 570 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$0.8430 / $0.9150 | Buy Now |
DISTI #
MMDF2P02HDR2G
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Avnet Americas | Transistor MOSFET Array Dual P-CH 20V 3.3A 8-Pin SOIC T/R - Tape and Reel (Alt: MMDF2P02HDR2G) RoHS: Compliant Min Qty: 563 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 809 Partner Stock |
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$0.5514 / $0.6582 | Buy Now |
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Rochester Electronics | Small Signal Field-Effect Transistor, 3.3A, 20V, 2-Element, P-Channel, MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 809 |
|
$0.5512 / $0.6485 | Buy Now |
Part Details for MMDF2P02HDR2G
MMDF2P02HDR2G CAD Models
MMDF2P02HDR2G Part Data Attributes
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MMDF2P02HDR2G
onsemi
Buy Now
Datasheet
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Compare Parts:
MMDF2P02HDR2G
onsemi
Power MOSFET 20V 3.3A 160 mOhm Dual P-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL
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Pbfree Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | SOIC-8 Narrow Body | |
Package Description | SO-8 | |
Pin Count | 8 | |
Manufacturer Package Code | 751-07 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | onsemi | |
Additional Feature | ULTRA LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 324 mJ | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 3.3 A | |
Drain-source On Resistance-Max | 0.16 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 232 pF | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 20 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 124 ns | |
Turn-on Time-Max (ton) | 170 ns |