Datasheets
MMSF3P02HDR2 by:

Power MOSFET -20V -5.6A 75 mOhm Single P-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL

Part Details for MMSF3P02HDR2 by onsemi

Overview of MMSF3P02HDR2 by onsemi

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for MMSF3P02HDR2

Part # Distributor Description Stock Price Buy
Bristol Electronics   Min Qty: 5 725
  • 5 $1.0125
  • 21 $0.6581
  • 77 $0.3797
  • 265 $0.3240
  • 572 $0.2835
$0.2835 / $1.0125 Buy Now
Bristol Electronics   2000
RFQ
Bristol Electronics   1957
RFQ
Quest Components MOSFET Transistor, P-Channel, SO 5953
  • 1 $1.0707
  • 1,794 $0.3926
  • 3,822 $0.3747
$0.3747 / $1.0707 Buy Now
Quest Components MOSFET Transistor, P-Channel, SO 580
  • 1 $1.3500
  • 90 $0.4050
  • 495 $0.3510
$0.3510 / $1.3500 Buy Now
Quest Components MOSFET Transistor, P-Channel, SO 1600
  • 1 $1.7150
  • 234 $0.6860
  • 1,167 $0.6003
$0.6003 / $1.7150 Buy Now
Chip1Cloud Power MOSFET 3 Amps, 20 Volts P?Channel SO?8 | MOSFET P-CH 20V 5.6A 8-SOIC 3970
RFQ
Component Electronics, Inc IN STOCK SHIP TODAY 75
  • 1 $1.5400
  • 100 $1.1500
  • 1,000 $1.0000
$1.0000 / $1.5400 Buy Now

Part Details for MMSF3P02HDR2

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MMSF3P02HDR2 Part Data Attributes:

MMSF3P02HDR2 onsemi
Buy Now Datasheet
Compare Parts:
MMSF3P02HDR2 onsemi Power MOSFET -20V -5.6A 75 mOhm Single P-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL
Pbfree Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer ON SEMICONDUCTOR
Part Package Code SOIC-8 Narrow Body
Package Description SMALL OUTLINE, R-PDSO-G8
Pin Count 8
Manufacturer Package Code 751-07
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 567 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 5.6 A
Drain-source On Resistance-Max 0.075 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 235
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Pulsed Drain Current-Max (IDM) 30 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for MMSF3P02HDR2

This table gives cross-reference parts and alternative options found for MMSF3P02HDR2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMSF3P02HDR2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MMSF3P02HDR2 5.6A, 20V, 0.095ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET Motorola Mobility LLC MMSF3P02HDR2 vs MMSF3P02HDR2
MMSF3P02HDR2 5.6A, 20V, 0.075ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 751-07, SO-8 Rochester Electronics LLC MMSF3P02HDR2 vs MMSF3P02HDR2
MMSF3P02HD Power Field-Effect Transistor, 5.6A I(D), 20V, 0.095ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 751-05, SOIC-8 Motorola Semiconductor Products MMSF3P02HDR2 vs MMSF3P02HD
Part Number Description Manufacturer Compare
IRF7204TR Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier MMSF3P02HDR2 vs IRF7204TR
MMSF3P02HD Power Field-Effect Transistor, 5.6A I(D), 20V, 0.095ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 751-05, SOIC-8 Motorola Semiconductor Products MMSF3P02HDR2 vs MMSF3P02HD
NDS9400 Power Field-Effect Transistor, 2.5A I(D), 20V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET National Semiconductor Corporation MMSF3P02HDR2 vs NDS9400
IRF7204 Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, Infineon Technologies AG MMSF3P02HDR2 vs IRF7204
IRF7204TRPBF Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, Infineon Technologies AG MMSF3P02HDR2 vs IRF7204TRPBF
IRF7204PBF Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 Infineon Technologies AG MMSF3P02HDR2 vs IRF7204PBF
IRF7202 Power Field-Effect Transistor, 2.5A I(D), 20V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier MMSF3P02HDR2 vs IRF7202

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