Datasheets
MMSF3P02HDR2 by:

5.6A, 20V, 0.075ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 751-07, SO-8

Part Details for MMSF3P02HDR2 by Rochester Electronics LLC

Overview of MMSF3P02HDR2 by Rochester Electronics LLC

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Part Details for MMSF3P02HDR2

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MMSF3P02HDR2 Part Data Attributes:

MMSF3P02HDR2 Rochester Electronics LLC
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MMSF3P02HDR2 Rochester Electronics LLC 5.6A, 20V, 0.075ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 751-07, SO-8
Pbfree Code No
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Part Package Code SOT
Package Description CASE 751-07, SO-8
Pin Count 8
Manufacturer Package Code CASE 751-07
Reach Compliance Code unknown
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 567 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 5.6 A
Drain-source On Resistance-Max 0.075 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e0
Moisture Sensitivity Level NOT SPECIFIED
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 240
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 30 A
Qualification Status COMMERCIAL
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for MMSF3P02HDR2

This table gives cross-reference parts and alternative options found for MMSF3P02HDR2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMSF3P02HDR2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MMSF3P02HDR2 Power MOSFET -20V -5.6A 75 mOhm Single P-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL onsemi MMSF3P02HDR2 vs MMSF3P02HDR2
MMSF3P02HD 5.6A, 20V, 0.095ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, CASE 751-05, SOIC-8 Motorola Mobility LLC MMSF3P02HDR2 vs MMSF3P02HD
Part Number Description Manufacturer Compare
IRF7204TRPBF Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, International Rectifier MMSF3P02HDR2 vs IRF7204TRPBF
IRF7204 Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, International Rectifier MMSF3P02HDR2 vs IRF7204
TPC8102 TRANSISTOR 6 A, 30 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET, 2-6J1A, 8 PIN, FET General Purpose Power Toshiba America Electronic Components MMSF3P02HDR2 vs TPC8102
IRF7204PBF Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier MMSF3P02HDR2 vs IRF7204PBF

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