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UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
22M5787
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Newark | Rf Mosfet, N Channel, 40V, 466-03, Full Reel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:2A, Power Dissipation:31.25W, Operating Frequency Min:450Mhz, Operating Frequency Max:520Mhz, No. Of Pins:3Pins, Product Range:- Rohs Compliant: Yes |Nxp MRF1513NT1 Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
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Rochester Electronics | MRF1513 - Lateral N-Channel Broadband RF Power MOSFET, 520 MHz, 3 W, 12.5 V RoHS: Compliant Status: Obsolete Min Qty: 1 | 9000 |
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$2.1000 / $2.4800 | Buy Now |
DISTI #
1577894
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element14 Asia-Pacific | MOSFET, N, RF, PLD-1.5 RoHS: Compliant Min Qty: 1 Container: Cut Tape | 0 |
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$2.4043 / $3.7877 | Buy Now |
DISTI #
1577894RL
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Farnell | MOSFET, N, RF, PLD-1.5 RoHS: Compliant Min Qty: 10 Lead time: 11 Weeks, 1 Days Container: Reel | 0 |
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$5.3421 / $6.2346 | Buy Now |
DISTI #
1577894
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Farnell | MOSFET, N, RF, PLD-1.5 RoHS: Compliant Min Qty: 1 Lead time: 11 Weeks, 1 Days Container: Cut Tape | 0 |
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$5.3421 / $6.8379 | Buy Now |
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MRF1513NT1
NXP Semiconductors
Buy Now
Datasheet
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Compare Parts:
MRF1513NT1
NXP Semiconductors
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Package Description | ROHS COMPLIANT, PLASTIC, PLD-1.5, CASE 466-03, 4 PIN | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00 | |
Samacsys Manufacturer | NXP | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 2 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
JESD-30 Code | R-PQSO-N4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 3 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 31.2 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | NO LEAD | |
Terminal Position | QUAD | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for MRF1513NT1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MRF1513NT1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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MRF1513T1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, PLASTIC, PLD-1.5, CASE 466-02, 4 PIN | Motorola Mobility LLC | MRF1513NT1 vs MRF1513T1 |
MRF1513NT1 | Lateral N-Channel Broadband RF Power MOSFET, 520 MHz, 3 W, 12.5 V | Freescale Semiconductor | MRF1513NT1 vs MRF1513NT1 |
MRF1513T1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, PLASTIC, PLD-1.5, CASE 466-03, 4 PIN | Freescale Semiconductor | MRF1513NT1 vs MRF1513T1 |
MRF1513T1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, POWER, PLASTIC, CASE 466-02, 4 PIN | TE Connectivity | MRF1513NT1 vs MRF1513T1 |
MRF1513T1 | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, POWER, PLASTIC, CASE 466-02, 4 PIN | MACOM | MRF1513NT1 vs MRF1513T1 |