Part Details for MRF8S18120HSR3 by NXP Semiconductors
Overview of MRF8S18120HSR3 by NXP Semiconductors
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Audio and Video Systems
Price & Stock for MRF8S18120HSR3
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
2156-MRF8S18120HSR3-954-ND
|
DigiKey | RF MOSFET Min Qty: 3 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
2750 In Stock |
|
$108.5700 | Buy Now |
|
Rochester Electronics | RF L Band, N-Channel Power MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 2750 |
|
$93.1700 / $109.6100 | Buy Now |
Part Details for MRF8S18120HSR3
MRF8S18120HSR3 CAD Models
MRF8S18120HSR3 Part Data Attributes
|
MRF8S18120HSR3
NXP Semiconductors
Buy Now
Datasheet
|
Compare Parts:
MRF8S18120HSR3
NXP Semiconductors
L BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Package Description | ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.75 | |
Factory Lead Time | 4 Weeks | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 65 V | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Highest Frequency Band | L BAND | |
JESD-30 Code | R-CDFP-F2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 225 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | FLATPACK | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |
Alternate Parts for MRF8S18120HSR3
This table gives cross-reference parts and alternative options found for MRF8S18120HSR3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MRF8S18120HSR3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
MRF8S18120HSR3 | GSM, GSM EDGE Lateral N-Channel RF Power MOSFET, 1805-1880 MHz, 72 W CW, 28 V | Freescale Semiconductor | MRF8S18120HSR3 vs MRF8S18120HSR3 |