Datasheets
MRFE6VP5300NR1 by:
NXP Semiconductors

RF POWER, FET

Part Details for MRFE6VP5300NR1 by NXP Semiconductors

Results Overview of MRFE6VP5300NR1 by NXP Semiconductors

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Applications Consumer Electronics

MRFE6VP5300NR1 Information

MRFE6VP5300NR1 by NXP Semiconductors is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for MRFE6VP5300NR1

Part # Distributor Description Stock Price Buy
DISTI # 85AC2004
Newark Rf Fet, 140V, 909W, 1.8Mhz-600Mhz, Drain Source Voltage Vds:140V, Continuous Drain Current Id:-, Power Dissipation Pd:909W, Operating Frequency Min:1.8Mhz, Operating Frequency Max:600Mhz, Rf Transistor Case:To-270Wb, No. Of Rohs Compliant: Yes |Nxp MRFE6VP5300NR1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
Buy Now
DISTI # 45X5015
Newark Wideband Rf Power Ldmos Transistor, 1.8-600 Mhz, 300 W Cw, 50 V/ Reel Rohs Compliant: Yes |Nxp MRFE6VP5300NR1 RoHS: Compliant Min Qty: 500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 100 $75.7700
$75.7700 Buy Now

US Tariff Estimator: MRFE6VP5300NR1 by NXP Semiconductors

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NXP Semiconductors
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Part Details for MRFE6VP5300NR1

MRFE6VP5300NR1 Part Data Attributes

MRFE6VP5300NR1 NXP Semiconductors
Buy Now Datasheet
Compare Parts:
MRFE6VP5300NR1 NXP Semiconductors RF POWER, FET
Rohs Code Yes
Part Life Cycle Code Obsolete
Reach Compliance Code Not Compliant
ECCN Code EAR99
HTS Code 8541.29.00
Factory Lead Time 111 Weeks
JESD-609 Code e3
Moisture Sensitivity Level 3
Peak Reflow Temperature (Cel) 260
Terminal Finish Tin (Sn)
Time@Peak Reflow Temperature-Max (s) 40

Alternate Parts for MRFE6VP5300NR1

This table gives cross-reference parts and alternative options found for MRFE6VP5300NR1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MRFE6VP5300NR1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
MRF6V4300NBR1 NXP Semiconductors Check for Price UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 MRFE6VP5300NR1 vs MRF6V4300NBR1
MRF5S4125NBR1 Freescale Semiconductor Check for Price UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272, ROHS COMPLIANT, PLASTIC, TO-272, CASE 1484-04, WB-4, 4 PIN MRFE6VP5300NR1 vs MRF5S4125NBR1
MRF6V2300NR5 NXP Semiconductors Check for Price RF POWER, FET MRFE6VP5300NR1 vs MRF6V2300NR5
MRF6V4300NR5 NXP Semiconductors Check for Price RF POWER, FET MRFE6VP5300NR1 vs MRF6V4300NR5
MRF6V4300NBR5 NXP Semiconductors Check for Price RF POWER, FET MRFE6VP5300NR1 vs MRF6V4300NBR5
MRF6V3090NBR1 NXP Semiconductors Check for Price UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 MRFE6VP5300NR1 vs MRF6V3090NBR1
MRF6V3090NBR5 NXP Semiconductors Check for Price UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 MRFE6VP5300NR1 vs MRF6V3090NBR5
MRF5S4125NR1 Freescale Semiconductor Check for Price UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270, ROHS COMPLIANT, PLASTIC, TO-270, CASE 1486-03, WB-4, 4 PIN MRFE6VP5300NR1 vs MRF5S4125NR1
MRF6V3090NR1 NXP Semiconductors Check for Price UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 MRFE6VP5300NR1 vs MRF6V3090NR1
MRF6V3090NR5 NXP Semiconductors Check for Price UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 MRFE6VP5300NR1 vs MRF6V3090NR5
equivalents icon

MRFE6VP5300NR1 Related Parts

MRFE6VP5300NR1 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the MRFE6VP5300NR1 is -40°C to 150°C.

  • To optimize performance, ensure proper thermal management, use a low-loss PCB material, and optimize the input and output matching networks. Additionally, consider using a heat sink and thermal interface material to reduce thermal resistance.

  • The recommended PCB layout and spacing for the MRFE6VP5300NR1 include using a 4-layer PCB with a solid ground plane, keeping the RF traces as short as possible, and maintaining a minimum spacing of 10 mils between the device and other components.

  • To handle the high voltage and current requirements of the MRFE6VP5300NR1, use a suitable power supply and ensure that the PCB is designed to handle high currents. Additionally, consider using a voltage regulator and current limiter to prevent damage to the device.

  • Key considerations for thermal design and heat sinking include using a heat sink with a high thermal conductivity, applying a thermal interface material, and ensuring good airflow around the device. Additionally, consider using a thermal simulation tool to optimize the thermal design.

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