Datasheets
MTD3055E by:

8A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252

Part Details for MTD3055E by Motorola Mobility LLC

Overview of MTD3055E by Motorola Mobility LLC

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Part Details for MTD3055E

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MTD3055E Part Data Attributes

MTD3055E Motorola Mobility LLC
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MTD3055E Motorola Mobility LLC 8A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer MOTOROLA INC
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 0.15 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 100 pF
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 20 W
Power Dissipation-Max (Abs) 20 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 130 ns
Turn-on Time-Max (ton) 80 ns

Alternate Parts for MTD3055E

This table gives cross-reference parts and alternative options found for MTD3055E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTD3055E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
RFD14N05SM9A N-Channel Power MOSFET 50V, 14A, 100mΩ, 2500-REEL onsemi MTD3055E vs RFD14N05SM9A
RFD14N05SM9A Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Harris Semiconductor MTD3055E vs RFD14N05SM9A
SSR3055 Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor MTD3055E vs SSR3055
RFD14N05SM 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA, 3 PIN Rochester Electronics LLC MTD3055E vs RFD14N05SM
RFD14N05SM9A_NL Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN Fairchild Semiconductor Corporation MTD3055E vs RFD14N05SM9A_NL
RFD14N05SM9A Power Field-Effect Transistor, Rochester Electronics LLC MTD3055E vs RFD14N05SM9A
RFD14N05SM 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA, 3 PIN Intersil Corporation MTD3055E vs RFD14N05SM
MTD3055E 8A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 Texas Instruments MTD3055E vs MTD3055E
SMD15N05 Power Field-Effect Transistor, 15A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, Temic Semiconductors MTD3055E vs SMD15N05
MTD10N05E Power Field-Effect Transistor, 10A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 Motorola Semiconductor Products MTD3055E vs MTD10N05E
Part Number Description Manufacturer Compare
IRF3710PBF Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier MTD3055E vs IRF3710PBF
IRF451 TRANSISTOR,MOSFET,N-CHANNEL,450V V(BR)DSS,13A I(D),TO-3 Intersil Corporation MTD3055E vs IRF451
IRF2804PBF Power Field-Effect Transistor, 75A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier MTD3055E vs IRF2804PBF
IRL3705ZSTRRPBF Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier MTD3055E vs IRL3705ZSTRRPBF
IRF1404PBF Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier MTD3055E vs IRF1404PBF
MTW6N60E Power Field-Effect Transistor, 6A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 Motorola Semiconductor Products MTD3055E vs MTW6N60E
IRF1404ZPBF Power Field-Effect Transistor, 75A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 International Rectifier MTD3055E vs IRF1404ZPBF
IRF4104PBF Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier MTD3055E vs IRF4104PBF
IRF3007STRLPBF Power Field-Effect Transistor, 62A I(D), 75V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier MTD3055E vs IRF3007STRLPBF
AUIRF1404ZL Power Field-Effect Transistor, 160A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, 3 PIN International Rectifier MTD3055E vs AUIRF1404ZL

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