Part Details for MTD8N06E by Motorola Semiconductor Products
Overview of MTD8N06E by Motorola Semiconductor Products
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Aerospace and Defense
Part Details for MTD8N06E
MTD8N06E CAD Models
MTD8N06E Part Data Attributes
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MTD8N06E
Motorola Semiconductor Products
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Datasheet
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MTD8N06E
Motorola Semiconductor Products
Power Field-Effect Transistor, 8A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 369A-13, DPAK-3
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MOTOROLA INC | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 8 A | |
| Drain-source On Resistance-Max | 0.12 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 40 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
Alternate Parts for MTD8N06E
This table gives cross-reference parts and alternative options found for MTD8N06E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTD8N06E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| RFD14N05SM9A | N-Channel Power MOSFET 50V, 14A, 100mΩ, 2500-REEL | onsemi | MTD8N06E vs RFD14N05SM9A |
| RFD14N05SM9A | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN | Fairchild Semiconductor Corporation | MTD8N06E vs RFD14N05SM9A |
| MTD3055E | Power Field-Effect Transistor, 8A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | Motorola Semiconductor Products | MTD8N06E vs MTD3055E |
| MTD10N05E | TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,10A I(D),TO-252AA | Freescale Semiconductor | MTD8N06E vs MTD10N05E |
| RFD14N05SM9A_NL | 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA, 3 PIN | Rochester Electronics LLC | MTD8N06E vs RFD14N05SM9A_NL |
| RFD14N05SM | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN | Fairchild Semiconductor Corporation | MTD8N06E vs RFD14N05SM |
| RFD14N05SM9A | Power Field-Effect Transistor, | Rochester Electronics LLC | MTD8N06E vs RFD14N05SM9A |
| SSR3055 | Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | Samsung Semiconductor | MTD8N06E vs SSR3055 |
| MTD8N06E | TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,8A I(D),TO-252AA | Freescale Semiconductor | MTD8N06E vs MTD8N06E |
| 2SK2018-01S | Power Field-Effect Transistor, 10A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, K-PACK(S), 3 PIN | Fuji Electric Co Ltd | MTD8N06E vs 2SK2018-01S |