-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power MOSFET -500V -2A 6 Ohm Single P-Channel TO-220, TO-220 3 LEAD STANDARD, 50-TUBE
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
MTP2P50EG by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
70340473
|
RS | MOSFET P-CHANNEL 500V 2A TO220AB Min Qty: 25 Package Multiple: 1 Container: Bulk | 0 |
|
$7.2600 / $8.4700 | RFQ |
|
|
ComSIT USA | 500 VOLTS, 2 AMPS TO-220 P-CHANNEL POWER MOSFET Power Field-Effect Transistor, 2A I(D), 500V, 6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB ECCN: EAR99 RoHS: Not Compliant |
|
|
RFQ | |
|
|
Chip Stock | PowerMOSFET-500V-2A6OhmSingleP-ChannelTO-220 | 865 |
|
RFQ | |
|
|
Vyrian | Transistors | 1051 |
|
RFQ | |
|
|
Win Source Electronics | Trans MOSFET P-CH 500V 2A 3-Pin(3+Tab) TO-220AB Tube / MOSFET P-CH 500V 2A TO220AB | 740 |
|
$54.1667 / $64.5833 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
|
MTP2P50EG
onsemi
Buy Now
Datasheet
|
Compare Parts:
MTP2P50EG
onsemi
Power MOSFET -500V -2A 6 Ohm Single P-Channel TO-220, TO-220 3 LEAD STANDARD, 50-TUBE
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | TO-220 3 LEAD STANDARD | |
| Package Description | Lead Free, Case 221a-09, 3 Pin | |
| Pin Count | 3 | |
| Manufacturer Package Code | 221A | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | High Voltage | |
| Avalanche Energy Rating (Eas) | 80 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 2 A | |
| Drain-source On Resistance-Max | 6 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-Channel | |
| Power Dissipation-Max (Abs) | 75 W | |
| Pulsed Drain Current-Max (IDM) | 6 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
This table gives cross-reference parts and alternative options found for MTP2P50EG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTP2P50EG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| VP2450N8-G | Microchip Technology Inc | $1.6395 | MOSFET, P-CHANNEL ENHANCEMENT-MODE, -500V, 30 Ohm | MTP2P50EG vs VP2450N8-G |
| MTP2P50E | Motorola Mobility LLC | Check for Price | 2A, 500V, 6ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | MTP2P50EG vs MTP2P50E |
| MTP2P50EG | Rochester Electronics LLC | Check for Price | 2A, 500V, 6ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, CASE 221A-09, 3 PIN | MTP2P50EG vs MTP2P50EG |
| MTP2P50E | onsemi | Check for Price | Power MOSFET -500V -2A 6 Ohm Single P-Channel TO-220, TO-220 3 LEAD STANDARD, 50-TUBE | MTP2P50EG vs MTP2P50E |
| VP0350N1 | Supertex Inc | Check for Price | Power Field-Effect Transistor, 1.5A I(D), 500V, 7.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 | MTP2P50EG vs VP0350N1 |
| VP0345N5 | Supertex Inc | Check for Price | Power Field-Effect Transistor, 1A I(D), 450V, 7.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | MTP2P50EG vs VP0345N5 |
| NTE2381 | NTE Electronics Inc | Check for Price | Power Field-Effect Transistor, 2A I(D), 500V, 6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | MTP2P50EG vs NTE2381 |
| VP2450N8-G | Supertex Inc | Check for Price | Power Field-Effect Transistor, 0.16A I(D), 500V, 30ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA, GREEN PACKAGE-3 | MTP2P50EG vs VP2450N8-G |
| VP0650N5 | Supertex Inc | Check for Price | Power Field-Effect Transistor, 0.25A I(D), 500V, 30ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | MTP2P50EG vs VP0650N5 |
| MTP2P50E | Rochester Electronics LLC | Check for Price | 2A, 500V, 6ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN | MTP2P50EG vs MTP2P50E |
A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's power handling at high temperatures.
The SOA is typically defined by the device's voltage, current, and power ratings. For the MTP2P50EG, the SOA is limited by the maximum voltage rating of 50V, maximum current rating of 2A, and maximum power rating of 100W.
Use proper ESD handling procedures, such as wearing an ESD strap, using ESD-safe materials, and storing the device in an ESD-safe environment. Also, consider adding ESD protection circuits in the design.
Store the device in a dry, cool place, away from direct sunlight and moisture. Handle the device by the body, not the leads, and avoid bending or flexing the leads.