NDS0605-F169
onsemi
Description: P-Channel Enhancement Mode Field Effect Transistor -60V, -0.18A, 5Ω, 3000-REEL

Overview of NDS0605-F169 by onsemi

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Available Datasheets

Part # Manufacturer Description Datasheet
54F169/QEA Rochester Electronics LLC 54F169 - Binary Counter, F/FAST Series, Synchronous, Positive Edge Triggered, 4-Bit, Bidirectional, TTL, CQCC20 - Dual marked (5962-8607201EA)
MSP430F169IPM Texas Instruments 16-bit Ultra-Low-Power MCU, 60kB Flash, 2048B RAM, 12-Bit ADC, Dual DAC, 2 USART, I2C, HW Mult, DMA 64-LQFP -40 to 85
MSP430F169IPMR Texas Instruments 16-bit Ultra-Low-Power MCU, 60kB Flash, 2048B RAM, 12-Bit ADC, Dual DAC, 2 USART, I2C, HW Mult, DMA 64-LQFP -40 to 85

Price & Stock for NDS0605-F169 by onsemi

Part # Manufacturer Description Stock Price Buy
Win Source Electronics MOSFET P-CH 60V SOT-23 / P-Channel 60 V 180mA (Ta) 360mW (Ta) Surface Mount SOT-23-3 197000
  • 395 $0.1280
  • 955 $0.1050
  • 1,475 $0.1020
  • 2,045 $0.0980
  • 2,635 $0.0950
  • 3,530 $0.0850
$0.0850 / $0.1280 Buy Now

CAD Models for NDS0605-F169 by onsemi
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Part Data Attributes for NDS0605-F169 by onsemi

NDS0605-F169
onsemi
-
-
Pbfree Code
Yes
Part Life Cycle Code
End Of Life
Ihs Manufacturer
ON SEMICONDUCTOR
Package Description
SOT-23, 3 PIN
Manufacturer Package Code
318BM
Reach Compliance Code
compliant
ECCN Code
EAR99
Samacsys Manufacturer
onsemi
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
Drain Current-Max (ID)
0.18 A
Drain-source On Resistance-Max
5 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (Abs)
0.36 W
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. NDS0605-F169
    onsemi
    P-Channel Enhancement Mode Field Effect Transistor -60V, -0.18A, 5Ω, 3000-REEL
    VS

Alternate Parts for NDS0605-F169

This table gives cross-reference parts and alternative options found for NDS0605-F169. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NDS0605-F169, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
NDS0605S62Z Small Signal Field-Effect Transistor, 0.18A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN Fairchild Semiconductor Corporation NDS0605-F169 vs NDS0605S62Z
NDS0605/D87Z 180mA, 60V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB Texas Instruments NDS0605-F169 vs NDS0605/D87Z
NDS0605D87Z Small Signal Field-Effect Transistor, 0.18A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation NDS0605-F169 vs NDS0605D87Z
NDS0605_NL Small Signal Field-Effect Transistor, 0.18A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN Fairchild Semiconductor Corporation NDS0605-F169 vs NDS0605_NL
NDS0605 Small Signal Field-Effect Transistor, 0.18A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN Fairchild Semiconductor Corporation NDS0605-F169 vs NDS0605
Part Number Description Manufacturer Compare
NDS0605 Small Signal Field-Effect Transistor, 0.18A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN Fairchild Semiconductor Corporation NDS0605-F169 vs NDS0605
NDS0605S62Z Small Signal Field-Effect Transistor, 0.18A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN Fairchild Semiconductor Corporation NDS0605-F169 vs NDS0605S62Z
NDS0605D87Z Small Signal Field-Effect Transistor, 0.18A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation NDS0605-F169 vs NDS0605D87Z
NDS0605_NL Small Signal Field-Effect Transistor, 0.18A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN Fairchild Semiconductor Corporation NDS0605-F169 vs NDS0605_NL

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