Transistors
NDS9957S62Z
Description: Power Field-Effect Transistor, 2.6A I(D), 60V, 0.16ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8

Overview of NDS9957S62Z by Fairchild Semiconductor Corporation

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Where used in Applications: Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

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Part Data Attributes for NDS9957S62Z by Fairchild Semiconductor Corporation

NDS9957S62Z
Fairchild Semiconductor Corporation
-
-
Part Life Cycle Code
Obsolete
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
Part Package Code
SOT
Package Description
SMALL OUTLINE, R-PDSO-G8
Pin Count
8
Reach Compliance Code
unknown
ECCN Code
EAR99
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
Drain Current-Max (ID)
2.6 A
Drain-source On Resistance-Max
0.16 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
Number of Elements
2
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
10 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. NDS9957S62Z
    Fairchild Semiconductor Corporation
    Power Field-Effect Transistor, 2.6A I(D), 60V, 0.16ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
    VS

Alternate Parts for NDS9957S62Z

This table gives cross-reference parts and alternative options found for NDS9957S62Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NDS9957S62Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
NDS9957L86Z Power Field-Effect Transistor, 2.6A I(D), 60V, 0.16ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation NDS9957S62Z vs NDS9957L86Z
NDS9957D84Z Power Field-Effect Transistor, 2.6A I(D), 60V, 0.16ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation NDS9957S62Z vs NDS9957D84Z
Part Number Description Manufacturer Compare
NDS9945X 3.5A, 60V, 0.1ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, SO-8 Texas Instruments NDS9957S62Z vs NDS9945X
RF1K49154 Power Field-Effect Transistor, 2A I(D), 60V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, Fairchild Semiconductor Corporation NDS9957S62Z vs RF1K49154
NDS9955S62Z Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation NDS9957S62Z vs NDS9955S62Z
NDS9955L99Z Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation NDS9957S62Z vs NDS9955L99Z
NDS9955L86Z Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation NDS9957S62Z vs NDS9955L86Z
RF1K4915496 Power Field-Effect Transistor, 2A I(D), 60V, 0.15ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, Harris Semiconductor NDS9957S62Z vs RF1K4915496
IRF7103UTRPBF Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 International Rectifier NDS9957S62Z vs IRF7103UTRPBF
NDS9959 Power Field-Effect Transistor, 2A I(D), 50V, 0.3ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation NDS9957S62Z vs NDS9959
NDS9959_NL Power Field-Effect Transistor, 2A I(D), 50V, 0.3ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation NDS9957S62Z vs NDS9959_NL
IRF7103TRPBF Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, Infineon Technologies AG NDS9957S62Z vs IRF7103TRPBF

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