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Transistors RF Small Signal Field-Effect Transistors NE32584C

NE32584C
Description: KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET

Overview of NE32584C by Renesas Electronics Corporation

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Part Data Attributes for NE32584C by Renesas Electronics Corporation
Parametric Data

NE32584C
Renesas Electronics Corporation
Buy Now
-
-
Part Life Cycle Code
Obsolete
Ihs Manufacturer
RENESAS ELECTRONICS CORP
Package Description
DISK BUTTON, O-CRDB-F4
Reach Compliance Code
unknown
ECCN Code
EAR99
Additional Feature
LOW NOISE
Configuration
SINGLE
FET Technology
HIGH ELECTRON MOBILITY
Highest Frequency Band
KU BAND
JESD-30 Code
O-CRDB-F4
Number of Elements
1
Number of Terminals
4
Operating Mode
DEPLETION MODE
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Package Shape
ROUND
Package Style
DISK BUTTON
Polarity/Channel Type
N-CHANNEL
Power Gain-Min (Gp)
12.5 dB
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Form
FLAT
Terminal Position
RADIAL
Transistor Element Material
GALLIUM ARSENIDE
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  1. NE32584C
    Renesas Electronics Corporation
    KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
    VS

Alternate Parts for NE32584C

This table gives cross-reference parts and alternative options found for NE32584C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NE32584C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
NE32584C RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, NEC Compound Semiconductor Devices Ltd NE32584C vs NE32584C
Part Number Description Manufacturer Compare
NE329S01-T1 RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET NEC Electronics Group NE32584C vs NE329S01-T1
NE32484A-SL RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Hetero-junction FET California Eastern Laboratories (CEL) NE32584C vs NE32484A-SL
NE32584C-T1 RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Hetero-junction FET, NEC Compound Semiconductor Devices Ltd NE32584C vs NE32584C-T1
NE325S01-T1 RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Hetero-junction FET, NEC Compound Semiconductor Devices Ltd NE32584C vs NE325S01-T1
NE34018-TI-64-A S BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HFET Renesas Electronics Corporation NE32584C vs NE34018-TI-64-A
NE34018-T2 RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Hetero-junction FET, PLASTIC, SUPERMINI-4 NEC Electronics Group NE32584C vs NE34018-T2
NE33284AS RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Hetero-junction FET, NEC Electronics America Inc NE32584C vs NE33284AS
NE32584C RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, NEC Compound Semiconductor Devices Ltd NE32584C vs NE32584C
NE32584C-SL X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HFET, METAL CERAMIC, 84C, 4 PIN Renesas Electronics Corporation NE32584C vs NE32584C-SL
NE3210S01-T1 RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, Hetero-junction FET, PLASTIC, SO1, 4 PIN California Eastern Laboratories (CEL) NE32584C vs NE3210S01-T1

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