Part Details for NE3520S03-T1C-A by Renesas Electronics Corporation
Overview of NE3520S03-T1C-A by Renesas Electronics Corporation
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Applications
Space Technology
Aerospace and Defense
Transportation and Logistics
Renewable Energy
Automotive
Robotics and Drones
Part Details for NE3520S03-T1C-A
NE3520S03-T1C-A CAD Models
NE3520S03-T1C-A Part Data Attributes
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NE3520S03-T1C-A
Renesas Electronics Corporation
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Datasheet
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NE3520S03-T1C-A
Renesas Electronics Corporation
NE3520S03-T1C-A
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.21.00.95 | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 4 V | |
Drain Current-Max (ID) | 0.015 A | |
FET Technology | HETERO-JUNCTION | |
Highest Frequency Band | K BAND | |
JESD-30 Code | S-PQMW-F4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 125 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | MICROWAVE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 0.165 W | |
Power Gain-Min (Gp) | 11.5 dB | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | QUAD | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | GALLIUM ARSENIDE |