Part Details for NE4210S01-T1B by NEC Electronics America Inc
Overview of NE4210S01-T1B by NEC Electronics America Inc
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Part Details for NE4210S01-T1B
NE4210S01-T1B CAD Models
NE4210S01-T1B Part Data Attributes
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NE4210S01-T1B
NEC Electronics America Inc
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Datasheet
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NE4210S01-T1B
NEC Electronics America Inc
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Hetero-junction FET, PLASTIC, S01, 4 PIN
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NEC ELECTRONICS AMERICA INC | |
| Package Description | PLASTIC, S01, 4 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW NOISE, HIGH RELIABILITY | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 3 V | |
| Drain Current-Max (ID) | 0.015 A | |
| FET Technology | HETERO-JUNCTION | |
| Highest Frequency Band | X BAND | |
| JESD-30 Code | X-PXMW-G4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | DEPLETION MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | UNSPECIFIED | |
| Package Style | MICROWAVE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Gain-Min (Gp) | 11 dB | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | UNSPECIFIED | |
| Transistor Element Material | GALLIUM ARSENIDE |
Alternate Parts for NE4210S01-T1B
This table gives cross-reference parts and alternative options found for NE4210S01-T1B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NE4210S01-T1B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NE4210S01 | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET | NEC Electronics Group | NE4210S01-T1B vs NE4210S01 |
| NE4210S01-T1B-A | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HFET | Renesas Electronics Corporation | NE4210S01-T1B vs NE4210S01-T1B-A |
| NE4210S01-T1B | NE4210S01-T1B | Renesas Electronics Corporation | NE4210S01-T1B vs NE4210S01-T1B |
| NE4210S01-T1-A | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HFET | Renesas Electronics Corporation | NE4210S01-T1B vs NE4210S01-T1-A |
| NE4210S01-T1 | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET | NEC Electronics Group | NE4210S01-T1B vs NE4210S01-T1 |
| NE4210S01-A | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Hetero-junction FET | NEC Electronics Group | NE4210S01-T1B vs NE4210S01-A |
| NE4210S01-T1B | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET | NEC Electronics Group | NE4210S01-T1B vs NE4210S01-T1B |