Datasheets
NE425S01-T1B by:

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Hetero-junction FET,

Part Details for NE425S01-T1B by NEC Compound Semiconductor Devices Ltd

Overview of NE425S01-T1B by NEC Compound Semiconductor Devices Ltd

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Applications Telecommunications

Part Details for NE425S01-T1B

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NE425S01-T1B Part Data Attributes

NE425S01-T1B NEC Compound Semiconductor Devices Ltd
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NE425S01-T1B NEC Compound Semiconductor Devices Ltd RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Hetero-junction FET,
Part Life Cycle Code Obsolete
Ihs Manufacturer NEC COMPOUND SEMICONDUCTOR DEVICES LTD
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOW NOISE
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 3 V
Drain Current-Max (ID) 0.02 A
FET Technology HETERO-JUNCTION
Highest Frequency Band KU BAND
JESD-30 Code X-PXMW-G4
Number of Elements 1
Number of Terminals 4
Operating Mode DEPLETION MODE
Package Body Material PLASTIC/EPOXY
Package Shape UNSPECIFIED
Package Style MICROWAVE
Polarity/Channel Type N-CHANNEL
Power Gain-Min (Gp) 10.5 dB
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position UNSPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material GALLIUM ARSENIDE

Alternate Parts for NE425S01-T1B

This table gives cross-reference parts and alternative options found for NE425S01-T1B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NE425S01-T1B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NE425S01-T1B RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET NEC Electronics Group NE425S01-T1B vs NE425S01-T1B
NE425S01-T1 KU BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HFET Renesas Electronics Corporation NE425S01-T1B vs NE425S01-T1
Part Number Description Manufacturer Compare
NE76118-M RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, PLASTIC, SUPERMINI-4 NEC Compound Semiconductor Devices Ltd NE425S01-T1B vs NE76118-M
NE72218-58 RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET NEC Electronics Group NE425S01-T1B vs NE72218-58
NE721S01-T1K RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, PLASTIC PACKAGE-4 NEC Electronics Group NE425S01-T1B vs NE721S01-T1K
NE721S01-T1BK RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, PLASTIC PACKAGE-4 NEC Electronics Group NE425S01-T1B vs NE721S01-T1BK
NE721S01-T1N RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, PLASTIC PACKAGE-4 NEC Electronics Group NE425S01-T1B vs NE721S01-T1N
NE76118-T1M RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, PLASTIC, SUPERMINI-4 NEC Compound Semiconductor Devices Ltd NE425S01-T1B vs NE76118-T1M
NE76118-T1K RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, SUPER MINIMOLD PACKAGE-4 NEC Electronics Group NE425S01-T1B vs NE76118-T1K
FHX14LG RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, CASE LG, 4 PIN FUJITSU Limited NE425S01-T1B vs FHX14LG
FHX05LG RF Small Signal Field-Effect Transistor, HERMETIC SEALED, METAL CERAMIC PACKAGE-4 FUJITSU Semiconductor Limited NE425S01-T1B vs FHX05LG
NE72218-T2-58 RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET NEC Electronics Group NE425S01-T1B vs NE72218-T2-58

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