Part Details for NE425S01-T1B by NEC Compound Semiconductor Devices Ltd
Overview of NE425S01-T1B by NEC Compound Semiconductor Devices Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Telecommunications
Part Details for NE425S01-T1B
NE425S01-T1B CAD Models
NE425S01-T1B Part Data Attributes
|
|
NE425S01-T1B
NEC Compound Semiconductor Devices Ltd
Buy Now
Datasheet
|
Compare Parts:
NE425S01-T1B
NEC Compound Semiconductor Devices Ltd
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Hetero-junction FET,
|
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NEC COMPOUND SEMICONDUCTOR DEVICES LTD | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW NOISE | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 3 V | |
| Drain Current-Max (ID) | 0.02 A | |
| FET Technology | HETERO-JUNCTION | |
| Highest Frequency Band | KU BAND | |
| JESD-30 Code | X-PXMW-G4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | DEPLETION MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | UNSPECIFIED | |
| Package Style | MICROWAVE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Gain-Min (Gp) | 10.5 dB | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | UNSPECIFIED | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | GALLIUM ARSENIDE |
Alternate Parts for NE425S01-T1B
This table gives cross-reference parts and alternative options found for NE425S01-T1B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NE425S01-T1B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NE425S01-T1B | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET | NEC Electronics Group | NE425S01-T1B vs NE425S01-T1B |
| NE425S01-T1 | KU BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HFET | Renesas Electronics Corporation | NE425S01-T1B vs NE425S01-T1 |