Part Details for NE651R479A-T1 by NEC Electronics Group
Overview of NE651R479A-T1 by NEC Electronics Group
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Part Details for NE651R479A-T1
NE651R479A-T1 CAD Models
NE651R479A-T1 Part Data Attributes
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NE651R479A-T1
NEC Electronics Group
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Datasheet
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NE651R479A-T1
NEC Electronics Group
RF Small Signal Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Hetero-junction FET, 79A, 4 PIN
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | NEC ELECTRONICS CORP | |
Package Description | MICROWAVE, R-XQMW-F4 | |
Pin Count | 4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | HIGH RELIABILITY | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 5.5 V | |
Drain Current-Max (ID) | 1 A | |
FET Technology | HETERO-JUNCTION | |
Highest Frequency Band | L BAND | |
JESD-30 Code | R-XQMW-F4 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | DEPLETION MODE | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | MICROWAVE | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN LEAD | |
Terminal Form | FLAT | |
Terminal Position | QUAD | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | GALLIUM ARSENIDE |
Alternate Parts for NE651R479A-T1
This table gives cross-reference parts and alternative options found for NE651R479A-T1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NE651R479A-T1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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NE651R479A | RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Hetero-junction FET, PLASTIC, 79A, 4 PIN | NEC Electronics America Inc | NE651R479A-T1 vs NE651R479A |
NE651R479A | RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Hetero-junction FET, PLASTIC, 79A, 4 PIN | California Eastern Laboratories (CEL) | NE651R479A-T1 vs NE651R479A |