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NE651R479A-T1 by:

RF Small Signal Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Hetero-junction FET, 79A, 4 PIN

Part Details for NE651R479A-T1 by NEC Electronics Group

Overview of NE651R479A-T1 by NEC Electronics Group

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Applications Education and Research Environmental Monitoring Industrial Automation Agriculture Technology Medical Imaging Electronic Manufacturing

Part Details for NE651R479A-T1

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NE651R479A-T1 Part Data Attributes

NE651R479A-T1 NEC Electronics Group
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NE651R479A-T1 NEC Electronics Group RF Small Signal Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Hetero-junction FET, 79A, 4 PIN
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer NEC ELECTRONICS CORP
Package Description MICROWAVE, R-XQMW-F4
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 5.5 V
Drain Current-Max (ID) 1 A
FET Technology HETERO-JUNCTION
Highest Frequency Band L BAND
JESD-30 Code R-XQMW-F4
JESD-609 Code e0
Number of Elements 1
Number of Terminals 4
Operating Mode DEPLETION MODE
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style MICROWAVE
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form FLAT
Terminal Position QUAD
Transistor Application AMPLIFIER
Transistor Element Material GALLIUM ARSENIDE

Alternate Parts for NE651R479A-T1

This table gives cross-reference parts and alternative options found for NE651R479A-T1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NE651R479A-T1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NE651R479A RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Hetero-junction FET, PLASTIC, 79A, 4 PIN NEC Electronics America Inc NE651R479A-T1 vs NE651R479A
NE651R479A RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Hetero-junction FET, PLASTIC, 79A, 4 PIN California Eastern Laboratories (CEL) NE651R479A-T1 vs NE651R479A
Part Number Description Manufacturer Compare
NE651R479A RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Hetero-junction FET, PLASTIC, 79A, 4 PIN NEC Electronics America Inc NE651R479A-T1 vs NE651R479A
NE651R479A RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Hetero-junction FET, PLASTIC, 79A, 4 PIN California Eastern Laboratories (CEL) NE651R479A-T1 vs NE651R479A

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