Datasheets
NE68733-T1 by:

RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN

Part Details for NE68733-T1 by California Eastern Laboratories (CEL)

Overview of NE68733-T1 by California Eastern Laboratories (CEL)

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Applications Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy

Part Details for NE68733-T1

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NE68733-T1 Part Data Attributes:

NE68733-T1 California Eastern Laboratories (CEL)
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NE68733-T1 California Eastern Laboratories (CEL) RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN
Part Life Cycle Code Obsolete
Ihs Manufacturer CALIFORNIA EASTERN LABORATORIES
Package Description SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOW NOISE
Collector Current-Max (IC) 0.03 A
Collector-Base Capacitance-Max 0.8 pF
Collector-Emitter Voltage-Max 3 V
Configuration SINGLE
DC Current Gain-Min (hFE) 70
Highest Frequency Band S BAND
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type NPN
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 12000 MHz

Alternate Parts for NE68733-T1

This table gives cross-reference parts and alternative options found for NE68733-T1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NE68733-T1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
ZTX325M1TC RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-92 STYLE, E-LINE PACKAGE-3 Diodes Incorporated NE68733-T1 vs ZTX325M1TC
BFP181R RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN Siemens NE68733-T1 vs BFP181R
2SC5255 TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, 2-2E1A, 3 PIN, BIP RF Small Signal Toshiba America Electronic Components NE68733-T1 vs 2SC5255
2SC2999 RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, High Frequency Band, Silicon, NPN, ULTRA SMALL, SPA, 3 PIN SANYO Semiconductor Co Ltd NE68733-T1 vs 2SC2999
2SC3124 TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal Toshiba America Electronic Components NE68733-T1 vs 2SC3124
NE02107B RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, L Band, Silicon, NPN, NEC Electronics America Inc NE68733-T1 vs NE02107B
MRF947AT1 L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, CASE 419-02, 3 PIN Freescale Semiconductor NE68733-T1 vs MRF947AT1
2SC4394 TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, 2-2E1A, SC-70, 3 PIN, BIP RF Small Signal Toshiba America Electronic Components NE68733-T1 vs 2SC4394
2SC3123 TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal Toshiba America Electronic Components NE68733-T1 vs 2SC3123
BFR182W RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, ROHS COMPLIANT PACKAGE-3 Infineon Technologies AG NE68733-T1 vs BFR182W

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