Datasheets
NE68819-T1 by:

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, C Band, Silicon, NPN

Part Details for NE68819-T1 by California Eastern Laboratories (CEL)

Overview of NE68819-T1 by California Eastern Laboratories (CEL)

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Part Details for NE68819-T1

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NE68819-T1 Part Data Attributes

NE68819-T1 California Eastern Laboratories (CEL)
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NE68819-T1 California Eastern Laboratories (CEL) RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, C Band, Silicon, NPN
Part Life Cycle Code Obsolete
Ihs Manufacturer CALIFORNIA EASTERN LABORATORIES
Package Description SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOW NOISE
Collector Current-Max (IC) 0.1 A
Collector-Base Capacitance-Max 0.8 pF
Collector-Emitter Voltage-Max 6 V
Configuration SINGLE
DC Current Gain-Min (hFE) 80
Highest Frequency Band C BAND
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type NPN
Power Dissipation Ambient-Max 0.125 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 9500 MHz

Alternate Parts for NE68819-T1

This table gives cross-reference parts and alternative options found for NE68819-T1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NE68819-T1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NE68819-T1 RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, C Band, Silicon, NPN, NEC Electronics America Inc NE68819-T1 vs NE68819-T1
NE68819 RF Small Signal Bipolar Transistor, 0.1A I(C), S Band, Silicon, NPN, PLASTIC, SC-90 NEC Electronics America Inc NE68819-T1 vs NE68819
Part Number Description Manufacturer Compare
BF767 RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Silicon, PNP YAGEO Corporation NE68819-T1 vs BF767
NE52418-A S BAND, GaAs, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SUPERMINI-4 Renesas Electronics Corporation NE68819-T1 vs NE52418-A
MPSH24RLRB VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92 Motorola Mobility LLC NE68819-T1 vs MPSH24RLRB
2SC5191-T1B RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, MINIMOLD PACKAGE-3 NEC Electronics Group NE68819-T1 vs 2SC5191-T1B
2SC5191 RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, MINIMOLD PACKAGE-3 NEC Electronics Group NE68819-T1 vs 2SC5191
UPA810TC-T1 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, ULTRA SUPER MINIMOLD PACKAGE-6 Renesas Electronics Corporation NE68819-T1 vs UPA810TC-T1
2SC5007FB RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, NEC Electronics America Inc NE68819-T1 vs 2SC5007FB
2N3663 Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92 onsemi NE68819-T1 vs 2N3663
UPA810T-FB-A RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, SO-6 NEC Electronics Group NE68819-T1 vs UPA810T-FB-A
UPA810T-T1FB RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, MINIMOLD PACKAGE-6 NEC Electronics Group NE68819-T1 vs UPA810T-T1FB

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