Datasheets
NE960R500-A by:

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, DIE-3

Part Details for NE960R500-A by NEC Compound Semiconductor Devices Ltd

Overview of NE960R500-A by NEC Compound Semiconductor Devices Ltd

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Applications Consumer Electronics Audio and Video Systems

Part Details for NE960R500-A

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NE960R500-A Part Data Attributes

NE960R500-A NEC Compound Semiconductor Devices Ltd
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NE960R500-A NEC Compound Semiconductor Devices Ltd RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, DIE-3
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer NEC COMPOUND SEMICONDUCTOR DEVICES LTD
Package Description DIE-3
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SINGLE
DS Breakdown Voltage-Min 9 V
Drain Current-Max (ID) 0.7 A
FET Technology METAL SEMICONDUCTOR
Highest Frequency Band KU BAND
JESD-30 Code R-XUUC-N3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode DEPLETION MODE
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style UNCASED CHIP
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form NO LEAD
Terminal Position UPPER
Transistor Application AMPLIFIER
Transistor Element Material GALLIUM ARSENIDE

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