Part Details for NE960R500-A by NEC Compound Semiconductor Devices Ltd
Overview of NE960R500-A by NEC Compound Semiconductor Devices Ltd
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Applications
Consumer Electronics
Audio and Video Systems
Part Details for NE960R500-A
NE960R500-A CAD Models
NE960R500-A Part Data Attributes
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NE960R500-A
NEC Compound Semiconductor Devices Ltd
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Datasheet
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NE960R500-A
NEC Compound Semiconductor Devices Ltd
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, DIE-3
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | NEC COMPOUND SEMICONDUCTOR DEVICES LTD | |
Package Description | DIE-3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 9 V | |
Drain Current-Max (ID) | 0.7 A | |
FET Technology | METAL SEMICONDUCTOR | |
Highest Frequency Band | KU BAND | |
JESD-30 Code | R-XUUC-N3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | DEPLETION MODE | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | UNCASED CHIP | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | UPPER | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | GALLIUM ARSENIDE |