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Transistors RF Power Bipolar Transistors NTE16002

NTE16002
NTE Electronics Inc
Description: RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN

Overview of NTE16002 by NTE Electronics Inc

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Education and Research Industrial Automation Computing and Data Storage Energy and Power Systems Electronic Manufacturing Renewable Energy

Price & Stock for NTE16002 by NTE Electronics Inc

Part # Manufacturer Description Stock Price Buy
Onlinecomponents.com Transistor NPN Silicon 65V IC=3A TO-60 Case Po=13.5 Watt 175 Mhz RF Power AMP/driver RoHS: Compliant 1 In Stock
  • 1 $70.9300
  • 5 $57.2900
  • 10 $56.3800
  • 25 $53.0000
  • 50 $50.7300
  • 100 $49.3000
  • 250 $47.9700
$47.9700 / $70.9300 Buy Now
Bristol Electronics   1
RFQ
Quest Components   1
  • 1 $42.9000
$42.9000 Buy Now

CAD Models for NTE16002 by NTE Electronics Inc
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Part Data Attributes for NTE16002 by NTE Electronics Inc
Parametric Data

NTE16002
NTE Electronics Inc
Buy Now
-
-
Part Life Cycle Code
Active
Ihs Manufacturer
NTE ELECTRONICS INC
Package Description
POST/STUD MOUNT, O-MUPM-P3
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.29.00.75
Case Connection
ISOLATED
Collector Current-Max (IC)
3 A
Collector-Base Capacitance-Max
20 pF
Collector-Emitter Voltage-Max
40 V
Configuration
SINGLE
DC Current Gain-Min (hFE)
5
Highest Frequency Band
VERY HIGH FREQUENCY BAND
JESD-30 Code
O-MUPM-P3
Number of Elements
1
Number of Terminals
3
Package Body Material
METAL
Package Shape
ROUND
Package Style
POST/STUD MOUNT
Polarity/Channel Type
NPN
Power Dissipation Ambient-Max
23 W
Power Dissipation-Max (Abs)
23 W
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
PIN/PEG
Terminal Position
UPPER
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
Transition Frequency-Nom (fT)
400 MHz
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  1. NTE16002
    NTE Electronics Inc
    RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
    VS

Alternate Parts for NTE16002

This table gives cross-reference parts and alternative options found for NTE16002. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTE16002, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
NTE344 RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN NTE Electronics Inc NTE16002 vs NTE344
BLY87C/01 TRANSISTOR VHF BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power NXP Semiconductors NTE16002 vs BLY87C/01
NTE478 RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN NTE Electronics Inc NTE16002 vs NTE478
SD1495 RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, Microsemi Corporation NTE16002 vs SD1495
MS1507 Transistor, Microsemi Corporation NTE16002 vs MS1507
NTE352 RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN NTE Electronics Inc NTE16002 vs NTE352
TP3032 UHF BAND, Si, NPN, RF POWER TRANSISTOR Motorola Mobility LLC NTE16002 vs TP3032
JO4045 VHF BAND, Si, NPN, RF POWER TRANSISTOR Motorola Mobility LLC NTE16002 vs JO4045
MS1507 RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, PLASTIC, M113, 4 PIN Advanced Power Technology NTE16002 vs MS1507
NTE475 RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN NTE Electronics Inc NTE16002 vs NTE475

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