Part Details for NTE357 by NTE Electronics Inc
Overview of NTE357 by NTE Electronics Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for NTE357
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | RF POWER BIPOLAR TRANSISTOR, 1-ELEMENT, VERY HIGH FREQUENCY BAND, SILICON, NPN | 7 |
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$116.1500 / $120.7960 | Buy Now |
Part Details for NTE357
NTE357 CAD Models
NTE357 Part Data Attributes
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NTE357
NTE Electronics Inc
Buy Now
Datasheet
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NTE357
NTE Electronics Inc
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | NTE ELECTRONICS INC | |
Package Description | POST/STUD MOUNT, O-CRPM-F4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.75 | |
Collector Current-Max (IC) | 1 A | |
Collector-Emitter Voltage-Max | 35 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 5 | |
Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
JESD-30 Code | O-CRPM-F4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | ROUND | |
Package Style | POST/STUD MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | NPN | |
Power Dissipation Ambient-Max | 15 W | |
Power Dissipation-Max (Abs) | 15 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | FLAT | |
Terminal Position | RADIAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |
Alternate Parts for NTE357
This table gives cross-reference parts and alternative options found for NTE357. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTE357, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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2SC2540 | RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, T-40E, 5 PIN | Mitsubishi Electric | NTE357 vs 2SC2540 |
NTE359 | RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN | NTE Electronics Inc | NTE357 vs NTE359 |
NTE352 | RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN | NTE Electronics Inc | NTE357 vs NTE352 |
2SC2106 | TRANSISTOR UHF BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power | Toshiba America Electronic Components | NTE357 vs 2SC2106 |
MS1507 | Transistor, | Microsemi Corporation | NTE357 vs MS1507 |
MRF325 | RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN | Motorola Semiconductor Products | NTE357 vs MRF325 |
BLY88C/01 | TRANSISTOR VHF BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power | NXP Semiconductors | NTE357 vs BLY88C/01 |
SD1495 | RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, | Microsemi Corporation | NTE357 vs SD1495 |
NTE350 | RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, T72H, 4 PIN | NTE Electronics Inc | NTE357 vs NTE350 |
BLY91A | TRANSISTOR VHF BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power | NXP Semiconductors | NTE357 vs BLY91A |