Datasheets
NTE357 by: NTE Electronics Inc

RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN

Part Details for NTE357 by NTE Electronics Inc

Overview of NTE357 by NTE Electronics Inc

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Price & Stock for NTE357

Part # Distributor Description Stock Price Buy
Quest Components RF POWER BIPOLAR TRANSISTOR, 1-ELEMENT, VERY HIGH FREQUENCY BAND, SILICON, NPN 7
  • 1 $120.7960
  • 5 $116.1500
$116.1500 / $120.7960 Buy Now

Part Details for NTE357

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NTE357 Part Data Attributes

NTE357 NTE Electronics Inc
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NTE357 NTE Electronics Inc RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer NTE ELECTRONICS INC
Package Description POST/STUD MOUNT, O-CRPM-F4
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.75
Collector Current-Max (IC) 1 A
Collector-Emitter Voltage-Max 35 V
Configuration SINGLE
DC Current Gain-Min (hFE) 5
Highest Frequency Band VERY HIGH FREQUENCY BAND
JESD-30 Code O-CRPM-F4
Number of Elements 1
Number of Terminals 4
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape ROUND
Package Style POST/STUD MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN
Power Dissipation Ambient-Max 15 W
Power Dissipation-Max (Abs) 15 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form FLAT
Terminal Position RADIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for NTE357

This table gives cross-reference parts and alternative options found for NTE357. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTE357, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
2SC2540 RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, T-40E, 5 PIN Mitsubishi Electric NTE357 vs 2SC2540
NTE359 RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN NTE Electronics Inc NTE357 vs NTE359
NTE352 RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN NTE Electronics Inc NTE357 vs NTE352
2SC2106 TRANSISTOR UHF BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power Toshiba America Electronic Components NTE357 vs 2SC2106
MS1507 Transistor, Microsemi Corporation NTE357 vs MS1507
MRF325 RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN Motorola Semiconductor Products NTE357 vs MRF325
BLY88C/01 TRANSISTOR VHF BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power NXP Semiconductors NTE357 vs BLY88C/01
SD1495 RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, Microsemi Corporation NTE357 vs SD1495
NTE350 RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, T72H, 4 PIN NTE Electronics Inc NTE357 vs NTE350
BLY91A TRANSISTOR VHF BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power NXP Semiconductors NTE357 vs BLY91A

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