Part Details for NTHL125N65S3H by onsemi
Results Overview of NTHL125N65S3H by onsemi
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (2 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
NTHL125N65S3H Information
NTHL125N65S3H by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for NTHL125N65S3H
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
32AJ8440
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Newark | Mosfet, N-Ch, 650V, 24A, To-247 Rohs Compliant: Yes |Onsemi NTHL125N65S3H RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 375 |
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$3.4100 / $7.0100 | Buy Now |
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DISTI #
488-NTHL125N65S3H-ND
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DigiKey | POWER MOSFET, N-CHANNEL, SUPERFE Min Qty: 1 Lead time: 23 Weeks Container: Tube | Temporarily Out of Stock |
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$3.2871 / $7.7500 | Buy Now |
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DISTI #
NTHL125N65S3H
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Avnet Americas | - Rail/Tube (Alt: NTHL125N65S3H) COO: Korea (the Republic of) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 23 Weeks, 0 Days Container: Tube | 0 |
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$3.2871 / $3.7567 | Buy Now |
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DISTI #
863-NTHL125N65S3H
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Mouser Electronics | MOSFETs Power MOSFET, N-Channel, SUPERFET III, FAST, 650 V, 24 A, 125 mohm, TO-247 RoHS: Compliant | 362 |
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$3.2800 / $7.0100 | Buy Now |
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Onlinecomponents.com | Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 24 A, 125 mΩ, TO-247 COO: South Korea | 0 |
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$3.2600 / $6.8100 | Buy Now |
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DISTI #
NTHL125N65S3H
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TME | Transistor: N-MOSFET, unipolar, 650V, 24A, Idm: 67A, 171W, TO247-3 Min Qty: 1 | 0 |
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$4.8000 / $7.3100 | RFQ |
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DISTI #
NTHL125N65S3H
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 450 | 0 |
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$3.2900 | Buy Now |
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DISTI #
NTHL125N65S3H
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Avnet Asia | (Alt: NTHL125N65S3H) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 23 Weeks, 0 Days | 0 |
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RFQ | |
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DISTI #
NTHL125N65S3H
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Avnet Silica | (Alt: NTHL125N65S3H) RoHS: Not Compliant Min Qty: 30 Package Multiple: 30 Lead time: 24 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
NTHL125N65S3H
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EBV Elektronik | (Alt: NTHL125N65S3H) RoHS: Not Compliant Min Qty: 30 Package Multiple: 30 Lead time: 25 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for NTHL125N65S3H
NTHL125N65S3H CAD Models
NTHL125N65S3H Part Data Attributes
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NTHL125N65S3H
onsemi
Buy Now
Datasheet
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Compare Parts:
NTHL125N65S3H
onsemi
Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 24 A, 125 mΩ, TO-247, TO-247-3LD, 450-TUBE
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Part Package Code | TO-247-3LD | |
| Manufacturer Package Code | 340CX | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 18 Weeks | |
| Avalanche Energy Rating (Eas) | 216 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 24 A | |
| Drain-source On Resistance-Max | 0.125 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Peak Reflow Temperature (Cel) | Not Specified | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 171 W | |
| Pulsed Drain Current-Max (IDM) | 67 A | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin (Sn) - Annealed | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | Not Specified | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for NTHL125N65S3H
This table gives cross-reference parts and alternative options found for NTHL125N65S3H. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTHL125N65S3H, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| NVB125N65S3 | onsemi | $2.9323 | MOSFET - Power, N-Channel, SUPERFET® III, Automotive, Easy-drive, 650 V, 24 A, 125 mΩ D2−PAK, D2PAK-3 / TO-263-2, 800-REEL, Automotive Qualified | NTHL125N65S3H vs NVB125N65S3 |
| NTMT125N65S3H | onsemi | $6.3016 | Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 24 A, 125 mΩ, Power88, TDFN4 8.00x8.00x1.00, 2.00P, 3000-REEL | NTHL125N65S3H vs NTMT125N65S3H |
NTHL125N65S3H Frequently Asked Questions (FAQ)
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The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the package, connecting it to a large copper area on the PCB, and using multiple vias to dissipate heat to the other layers. A minimum of 2oz copper thickness is recommended.
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To ensure reliable operation at high temperatures, it's essential to follow the recommended derating curves for voltage and current, and to ensure that the device is properly cooled. A maximum junction temperature of 150°C should not be exceeded.
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The NTHL125N65S3H has an integrated ESD protection diode, but it's still recommended to follow proper ESD handling procedures during assembly and testing. A human body model (HBM) of 2kV and a machine model (MM) of 200V are recommended.
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Yes, the NTHL125N65S3H can be used in a parallel configuration to increase current handling, but it's essential to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent oscillations.
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The recommended gate drive voltage for the NTHL125N65S3H is 10-15V, with a current capability of at least 1A. A gate resistor of 10-20 ohms is recommended to prevent oscillations.