Part Details for NTLJS2103PTBG by onsemi
Overview of NTLJS2103PTBG by onsemi
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Security and Surveillance
Internet of Things (IoT)
Telecommunications
Communication and Networking
Price & Stock for NTLJS2103PTBG
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
08R3958
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Newark | P Channel Mosfet, -12V, 5.9A, Wdfn6, Channel Type:P Channel, Drain Source Voltage Vds:12V, Continuous Drain Current Id:5.9A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:800Mv Rohs Compliant: Yes |Onsemi NTLJS2103PTBG RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.2180 / $0.2260 | Buy Now |
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DISTI #
NTLJS2103PTBGOSCT-ND
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DigiKey | MOSFET P-CH 12V 3.5A 6WDFN Min Qty: 1 Lead time: 13 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2490 In Stock |
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$0.2044 / $1.0100 | Buy Now |
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DISTI #
NTLJS2103PTBG
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Avnet Americas | Trans MOSFET P-CH 12V 5.9A 6-Pin WDFN T/R - Tape and Reel (Alt: NTLJS2103PTBG) RoHS: Compliant Min Qty: 1530 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 21000 Partner Stock |
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$0.2027 / $0.2420 | Buy Now |
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DISTI #
NTLJS2103PTBG
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Avnet Americas | Trans MOSFET P-CH 12V 5.9A 6-Pin WDFN T/R - Tape and Reel (Alt: NTLJS2103PTBG) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 13 Weeks, 0 Days Container: Reel | 0 |
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$0.1979 | Buy Now |
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DISTI #
863-NTLJS2103PTBG
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Mouser Electronics | MOSFETs PFET WDFN6 12V 5.9A 0.025 RoHS: Compliant | 40825 |
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$0.2040 / $0.6200 | Buy Now |
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Future Electronics | NTLJS2103P Series -12 V 7.7 A 0.025 Ohms Single P-Channel Power MOSFET - WDFN-6 RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Lead time: 13 Weeks Container: Reel | 0Reel |
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$0.1990 / $0.2150 | Buy Now |
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Onlinecomponents.com | NTLJS2103PTBG P-channel MOSFET Transistor, 7.7 A, 12 V, 6-Pin WDFN | ON Semiconductor NTLJS2103PTBG | 0 |
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$0.1973 / $0.2209 | Buy Now |
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Rochester Electronics | NTLJS2103P - Small Signal Field-Effect Transistor, 5.9A, 12V, P-Channel, MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 21000 |
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$0.2026 / $0.2384 | Buy Now |
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DISTI #
NTLJS2103PTBG
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 6000 | 0 |
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$0.2000 | Buy Now |
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DISTI #
NTLJS2103PTBG
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Avnet Silica | Trans MOSFET P-CH 12V 5.9A 6-Pin WDFN T/R (Alt: NTLJS2103PTBG) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days | Silica - 3000 |
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Buy Now |
Part Details for NTLJS2103PTBG
NTLJS2103PTBG CAD Models
NTLJS2103PTBG Part Data Attributes
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NTLJS2103PTBG
onsemi
Buy Now
Datasheet
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Compare Parts:
NTLJS2103PTBG
onsemi
Single P-Channel µCool™ Power MOSFET -12V -7.7A 40mΩ, WDFN6, 2 x 2 x 0.75 mm, 0.65 mm Pitch, 3000-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ON SEMICONDUCTOR | |
| Part Package Code | WDFN6, 2 x 2 x 0.75 mm, 0.65 mm Pitch | |
| Package Description | SMALL OUTLINE, R-PDSO-N6 | |
| Pin Count | 6 | |
| Manufacturer Package Code | 506AP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 12 V | |
| Drain Current-Max (ID) | 5.9 A | |
| Drain-source On Resistance-Max | 0.04 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-PDSO-N6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 3.3 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |