Part Details for NVB25P06T4G by onsemi
Results Overview of NVB25P06T4G by onsemi
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (10 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
NVB25P06T4G Information
NVB25P06T4G by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for NVB25P06T4G
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | NVB25P06 - P-Channel Power MOSFET -60V, -27.5A, 82m Power RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 2400 |
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$0.7130 / $1.1500 | Buy Now |
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Flip Electronics | Stock, Ship Today | 7200 |
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RFQ |
US Tariff Estimator: NVB25P06T4G by onsemi
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
Part Details for NVB25P06T4G
NVB25P06T4G Part Data Attributes
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NVB25P06T4G
onsemi
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Datasheet
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NVB25P06T4G
onsemi
P-Channel Power MOSFET -60V, -27.5A, 82mΩ Power MOSFET -60V -27.5A 82 mOhm Single P-Channel D2PAK, D2PAK 2 LEAD, 800-REEL, Automotive Qualified
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | D2PAK 2 LEAD | |
| Pin Count | 3 | |
| Manufacturer Package Code | 418B-04 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 600 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 27.5 A | |
| Drain-source On Resistance-Max | 0.082 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 120 W | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Reference Standard | Aec-Q101 | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) - Annealed | |
| Terminal Form | Gull Wing | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for NVB25P06T4G
This table gives cross-reference parts and alternative options found for NVB25P06T4G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NVB25P06T4G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| NTB25P06T4G | onsemi | $1.3893 | Single P-Channel Power MOSFET -60V, -27.5A, 82 mΩ, D2PAK 2 LEAD, 800-REEL | NVB25P06T4G vs NTB25P06T4G |
| NTB25P06G | onsemi | Check for Price | 27.5A, 60V, 0.082ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 418B-04, D2PAK-3 | NVB25P06T4G vs NTB25P06G |
| NTB30N06T4 | onsemi | Check for Price | 27A, 60V, 0.042ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 418B-04, D2PAK-3 | NVB25P06T4G vs NTB30N06T4 |
| NTB30N06L | onsemi | Check for Price | 30A, 60V, 0.046ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 418B-04, D2PAK-3 | NVB25P06T4G vs NTB30N06L |
| NTB30N06LT4G | onsemi | Check for Price | Power MOSFET 60V 30A 46mOhm Single N-Channel D2PAK with Logic Level, D2PAK 2 LEAD, 800-REEL | NVB25P06T4G vs NTB30N06LT4G |
| NTB30N06T4G | onsemi | Check for Price | 27A, 60V, 0.042ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 418B-04, D2PAK-3 | NVB25P06T4G vs NTB30N06T4G |
| MTB23P06VT4 | onsemi | Check for Price | 23A, 60V, 0.12ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 418B-03, D2PAK-3 | NVB25P06T4G vs MTB23P06VT4 |
| MTB23P06V | onsemi | Check for Price | 23A, 60V, 0.12ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 418B-03, D2PAK-3 | NVB25P06T4G vs MTB23P06V |
| NTB30N06LG | onsemi | Check for Price | Power MOSFET 60V 30A 46mOhm Single N-Channel D2PAK with Logic Level, D2PAK 2 LEAD, 50-TUBE | NVB25P06T4G vs NTB30N06LG |
| NTB25P06T4 | onsemi | Check for Price | 27.5A, 60V, 0.082ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 418B-04, D2PAK-3 | NVB25P06T4G vs NTB25P06T4 |
NVB25P06T4G Frequently Asked Questions (FAQ)
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A good PCB layout for optimal thermal performance involves placing thermal vias under the device, using a solid ground plane, and keeping the thermal path as short as possible. It's also recommended to use a thermal pad on the bottom of the device and to avoid routing high-current traces under the device.
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To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating conditions, provide adequate heat sinking, and consider derating the device's power handling capabilities. Additionally, ensure that the PCB is designed to withstand the high temperatures and that the device is properly soldered.
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The NVB25P06T4G has built-in ESD protection, but it's still recommended to follow proper ESD handling procedures during assembly and testing. This includes using ESD-safe materials, grounding straps, and ionizers to minimize the risk of ESD damage.
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Yes, the NVB25P06T4G can be used in switching regulator applications due to its low RDS(on) and high current handling capabilities. However, it's essential to ensure that the device is properly driven and that the switching frequency is within the recommended range to avoid overheating and reduce electromagnetic interference (EMI).
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The recommended gate drive voltage for the NVB25P06T4G is between 4.5V and 10V, and the recommended gate drive current is around 1A to 2A. However, the actual gate drive requirements may vary depending on the specific application and switching frequency.