Datasheets
NVB6410ANT4G by: onsemi

Power MOSFET 100V, 76A, 13 mOhm, Single N-Channel, D2PAK. Power MOSFET 100V 76A 13 mOhm Single N-Channel D2PAK, D2PAK 2 LEAD, 800-REEL, Automotive Qualified

Part Details for NVB6410ANT4G by onsemi

Overview of NVB6410ANT4G by onsemi

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Applications Consumer Electronics Security and Surveillance Audio and Video Systems Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Medical Imaging

Part Details for NVB6410ANT4G

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NVB6410ANT4G Part Data Attributes

NVB6410ANT4G onsemi
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NVB6410ANT4G onsemi Power MOSFET 100V, 76A, 13 mOhm, Single N-Channel, D2PAK. Power MOSFET 100V 76A 13 mOhm Single N-Channel D2PAK, D2PAK 2 LEAD, 800-REEL, Automotive Qualified
Pbfree Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ON SEMICONDUCTOR
Part Package Code D2PAK 2 LEAD
Package Description D2PAK-3/2
Pin Count 3
Manufacturer Package Code 418B-04
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 500 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 76 A
Drain-source On Resistance-Max 0.013 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 188 W
Pulsed Drain Current-Max (IDM) 305 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for NVB6410ANT4G

This table gives cross-reference parts and alternative options found for NVB6410ANT4G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NVB6410ANT4G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NTB6410ANG Single N-Channel Power MOSFET 100V, 76A, 13 mΩ, D2PAK 2 LEAD, 50-TUBE onsemi NVB6410ANT4G vs NTB6410ANG
Part Number Description Manufacturer Compare
NVB6411ANT4G Power MOSFET 100V, 72A, 14, mohm, Single N-Channel, D2PAK. Power MOSFET 100V, 72A, 14, mohm, Single N-Channel, D2PAK., D2PAK 2 LEAD, 800-REEL, Automotive Qualified onsemi NVB6410ANT4G vs NVB6411ANT4G
SHD239602 Power Field-Effect Transistor, 75A I(D), 100V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SHD-6, 3 PIN Sensitron Semiconductors NVB6410ANT4G vs SHD239602
SML10S75XX Power Field-Effect Transistor, 75A I(D), 100V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 TT Electronics Resistors NVB6410ANT4G vs SML10S75XX
IRFB4610TRL Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier NVB6410ANT4G vs IRFB4610TRL
PSMN015-100YLX PSMN015-100YL - N-channel 100 V, 15 mΩ logic level MOSFET in LFPAK56@en-us SOIC 4-Pin Nexperia NVB6410ANT4G vs PSMN015-100YLX
IRFSL4610TRRPBF Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN Infineon Technologies AG NVB6410ANT4G vs IRFSL4610TRRPBF
IRFS4610 Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3/2 Infineon Technologies AG NVB6410ANT4G vs IRFS4610
IRFS4610TRR Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 International Rectifier NVB6410ANT4G vs IRFS4610TRR
APT10M19SVFRG Power Field-Effect Transistor, 75A I(D), 100V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Microchip Technology Inc NVB6410ANT4G vs APT10M19SVFRG
HUF75645P3 N-Channel UltraFET Power MOSFET 100V, 75A, 14mΩ, 800-TUBE onsemi NVB6410ANT4G vs HUF75645P3

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