Part Details for NVF2955T1G by onsemi
Results Overview of NVF2955T1G by onsemi
- Distributor Offerings: (48 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (4 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
NVF2955T1G Information
NVF2955T1G by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for NVF2955T1G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
02AC3819
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Newark | Mosfet, P-Ch, -60V, -2.6A, Sot-223, Channel Type:P Channel, Drain Source Voltage Vds:-60V, Continuous Drain Current Id:-2.6A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:-10V, Gate Source Threshold Voltage Max:-4V Rohs Compliant: Yes |Onsemi NVF2955T1G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 1406 |
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$0.5270 / $1.0800 | Buy Now |
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DISTI #
65T1518
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Newark | Pfet Sot223 60V 2.6A 140M Rohs Compliant: Yes |Onsemi NVF2955T1G RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Tape & Reel | 0 |
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$0.6170 / $0.7710 | Buy Now |
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DISTI #
488-NVF2955T1GCT-ND
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DigiKey | MOSFET P-CH 60V 2.6A SOT223 Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
1382 In Stock |
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$0.4264 / $1.7200 | Buy Now |
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DISTI #
NVF2955T1G
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Avnet Americas | Power MOSFET, P Channel, 60 V, 2.6 A, 0.145 ohm, SOT-223, Surface Mount - Tape and Reel (Alt: NVF2955T1G) COO: Malaysia RoHS: Compliant Min Qty: 2000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Tape & Reel | 0 |
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$0.4264 / $0.4873 | Buy Now |
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DISTI #
863-NVF2955T1G
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Mouser Electronics | MOSFETs PFET SOT223 60V 2.6A 140M RoHS: Compliant | 4086 |
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$0.4260 / $1.3400 | Buy Now |
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DISTI #
E02:0323_03805150
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Arrow Electronics | Trans MOSFET P-CH 60V 2.6A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101 COO: Malaysia RoHS: Exempt Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks Date Code: 2428 | Europe - 30000 |
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$0.4370 | Buy Now |
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DISTI #
V36:1790_07310025
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Arrow Electronics | Trans MOSFET P-CH 60V 2.6A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101 COO: Malaysia RoHS: Exempt Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks Date Code: 2533 | Americas - 1000 |
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$0.4212 / $0.5137 | Buy Now |
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DISTI #
V72:2272_07310025
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Arrow Electronics | Trans MOSFET P-CH 60V 2.6A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101 COO: Malaysia RoHS: Exempt Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2407 Container: Cut Strips | Americas - 690 |
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$0.5188 / $0.5560 | Buy Now |
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DISTI #
70547300
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RS | NVF2955T1G P-CHANNEL MOSFET TRANSISTOR, 2 A, 60 V, 3 + TAB-PIN SOT-223 Min Qty: 1 Package Multiple: 1 Container: Bulk | 0 |
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$0.5100 | RFQ |
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Future Electronics | Single P-Channel 60 V 2.6 A 170 mOhm Surface Mount Power MOSFET SOT-223 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks Container: Reel | 2000Reel |
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$0.4900 / $0.5150 | Buy Now |
US Tariff Estimator: NVF2955T1G by onsemi
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
Part Details for NVF2955T1G
NVF2955T1G CAD Models
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NVF2955T1G Part Data Attributes
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NVF2955T1G
onsemi
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Datasheet
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NVF2955T1G
onsemi
Power Field-Effect Transistor, 1.7A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Part Package Code | SOT-223 (TO-261) 4 LEAD | |
| Package Description | To-261, 4 Pin | |
| Pin Count | 4 | |
| Manufacturer Package Code | 0.0318 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 9 Weeks | |
| Avalanche Energy Rating (Eas) | 225 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 1.7 A | |
| Drain-source On Resistance-Max | 0.185 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-261AA | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-Channel | |
| Power Dissipation-Max (Abs) | 2.3 W | |
| Pulsed Drain Current-Max (IDM) | 17 A | |
| Reference Standard | Aec-Q101 | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) - Annealed | |
| Terminal Form | Gull Wing | |
| Terminal Position | Dual | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for NVF2955T1G
This table gives cross-reference parts and alternative options found for NVF2955T1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NVF2955T1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| NTF2955T1G | onsemi | $0.6301 | Power Field-Effect Transistor, 1.7A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | NVF2955T1G vs NTF2955T1G |
| NTF2955T3 | onsemi | Check for Price | Power Field-Effect Transistor, 1.7A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | NVF2955T1G vs NTF2955T3 |
| NTF2955T1 | onsemi | Check for Price | Power Field-Effect Transistor, 1.7A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | NVF2955T1G vs NTF2955T1 |
| NVF2955PT1G | onsemi | Check for Price | Power Field-Effect Transistor, 1.7A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | NVF2955T1G vs NVF2955PT1G |
NVF2955T1G Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the NVF2955T1G is -40°C to 150°C.
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To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and minimizing thermal resistance.
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For minimal EMI, it's recommended to use a multi-layer PCB with a solid ground plane, keep the device away from noise sources, and use shielding or filtering if necessary.
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Yes, the NVF2955T1G is designed to handle high-voltage applications up to 55V. However, ensure that the device is properly biased and that the voltage ratings are not exceeded.
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To troubleshoot issues, start by verifying the device's operating conditions, checking for proper biasing and voltage supply, and ensuring that the device is not overheating. If issues persist, consult the datasheet and application notes or contact onsemi support.